Effect of defects on the electronic structure of a PbI2/MoS2 van der Waals heterostructure: A first-principles study

PbI2/MoS2,as a typical van der Waals(vdW)heterostructure,has attracted intensive attention owing to its remarkable electronic and optoelectronic properties.In this work,the effect of defects on the electronic structures of a PbI2/MoS2 heterointerface has been systematically investigated.The manner in which the defects modulate the band structure of PbI2/MoS2,including the band gap,band edge,band alignment,and defect energy-level density within the band gap is discussed herein.It is shown that sulfur defects tune the band gaps,iodine defects shift the positions of the band edge and Fermi level,and lead defects realize the conversions between the straddling-gap band alignment and valence-band-aligned gap,thus enhancing the light-absorption ability of the material.     

Characterization of bicrystalline epitaxial LaNiO3 films fabricated on MgO (1 0 0) substrates by pulsed laser deposition

A series of metallic LaNiO₃ (LNO) thin films were deposited on MgO (1 0 0) substrates by pulsed laser deposition (PLD) under the oxygen pressure of 20 Pa at different substrate temperatures from 450 to 750 °C. X-ray diffraction (XRD) was used to characterize the crystal structure of LNO films. θ-2θ scans of XRD indicate that LNO film deposited at a substrate temperature of 700 °C has a high orientation of (l l 0). At other substrate temperatures, the LNO films have mixed phases of (l l 0) and (l 0 0). Furthermore, pole figure measurements show that LNO thin films, with the bicrystalline structure, were epitaxially deposited on MgO (1 0 0) substrates in the mode of LNO (1 1 0)//MgO (1 0 0) at 700 °C. Reflection high-energy electric diffraction (RHEED) and atomic force microscopy (AFM) were also performed to investigate the microstructure of LNO films with the high (l l 0) orientation. RHEED patterns clearly confirm this epitaxial relationship. An atomically smooth surface of LNO films at 700 °C was obtained. In addition, bicrystalline epitaxial LNO films, fabricated at 700 °C, present a excellent conductivity with a lower electrical resistivity of 300 μ Ω cm. Thus, the obtained results indicate that bicystalline epitaxial LNO films could serve as a promising candidate of electrode materials for the fabrication of ferroelectric or dielectric films.     

Surface plasmon polaritons based optical directional coupler

As a basic optical device, the optical directional coupler (ODC) is basically used as optical splitters, optic switches and so on. A novel ODC employing surface plasmon polaritons (SPPs) is proposed for high integration. The finite difference time domain (FDTD) method is adopted to simulate and analyze its properties. Results show that the ODC proposed here follows the general regulations of a conventional dielectric ODC, but its transverse size is of nanoscale, which improves the optical integration greatly. For 1550 nm and 1310 nm input wavelengths, when the coupling region length (L) equals half of its coupling length, the Excess Loss is respectively 0.57 dB and 0.56 dB, which is practical in applications. So the research on the present ODC is of some practical importance.     

苯乙烯阴离子本体聚合引发剂缔合及其机理的研究

分别以正丁基锂和叔丁基锂为引发剂,采用自制管式流动反应装置,对较高温度下苯乙烯阴离子本体聚合动力学进行了研究.证实了正丁基锂主要以六元缔合结构形式引发聚合,并导致超分子团聚体的形成,从而使进一步的聚合因单体扩散受阻而受到限制,并伴随聚合转化率停滞平台（SCP）的产生.随后由于前期聚合累积的能量,使超分子结构完全解离.聚合温度越高,SCP持续时间越短.结果还表明,在正丁基锂引发剂中,存在一个以六元缔合结构为基础形成的更大的缔合体结构.原子力显微镜照片显示,超分子结构的直径分别为20～30nm和50～60nm.此外,在阴离子聚合过程中活性种的缔合结构只决定于初始引发剂的分子结构,而不同活性种缔合结构对阴离子聚合的链增长存在很大影响,从而解释了采用不同结构的锂系引发剂引发苯乙烯单体聚合时聚合速率存在巨大差异的原因.