Synthesis and structural characterization of Znb3Nb2 powder

Science China Physics, Mechanics & Astronomy - Zinc nitride (Znb3Nb2) powder has been synthesized through the nitridation reaction of Zn powder with NH3 gas (at the flow rate of 500 ml/min) at...     

Enhanced electrochemical performance of LiNi0.83Co0.12Mn0.05O2 cathodes with a fast-ion conductor Li0.33La0.56TiO3 coating layer

Journal of Solid State Electrochemistry - Ni-rich layered cathode materials LiNixCoyMn(1-x–y)O2 (x ≥ 0.8) suffer from capacity decay due to structural deterioration during...     

Synthesis and structural characterization of Zn_3N_2 powder

1 Introduction In the field of wide band gap semiconductors, many studies have been carried out on zinc compounds. For example, ZnO, as a semiconductor material of n-type with a wide direct band gap of 3.37 eV[1—3], can function as transparent conducting films of low cost; ZnO, with an extremely large exciton binding energy of 60 meV and a strong ultra- violet (UV) stimulated emission at room temperature, has enormous potential for serving as short-wave light devices[4], such as light-emit…     

On *-Clean Group Rings II

A ring with involution * is called *-clean if each of its elements is the sum of a unit and a projection (*-invariant idempotent). Recently, Gao, Chen, and Li obtained necessary and sufficient conditions for RG to be *-clean, where R is a commutative local ring and G is one of C₃, C₄, S₃, and Q₈. Most recently, Li, Yuan, and Parmenter gave a complete characterization of when the group algebra FC_p is *-clean, where F is a field and C_p is a cyclic group of prime order p. In this article, we extend the above mentioned result from FC_p to F_qC_p^k, where F_q is a finite field and C_p^k is a cyclic group of an odd prime power order p^k. For the general case when G = C_n is cyclic group of order n, we also provide a necessary condition and a few sufficient conditions for F_qC_n to be *-clean.     

Applications of pressurized cation exchange chromatography for fission yield determination

In order to determine the fission yields of lanthanides precisely, lanthanides with carriers of 1–2 mg per element are separated from each other by means of pressurized cation exchange chromatography-HIBA concentration gradient elution: The effects of initial loading technique, concentration gradient, flow rate, and temperature on separation were investigated in detail. Under the optimum conditions adopted according to the results given in this work, all the lanthanides can be completely separated within about 90 minutes with a recovery of more than 95% and purity higher than 99%.     

Optical band gap of zinc nitride films prepared on quartz substrates from a zinc nitride target by reactive rf magnetron sputtering

Polycrystalline zinc nitride films have been synthesized onto quartz substrates from the zinc nitride target and the nitrogen working gas by reactive rf magnetron sputtering at room temperature. X-ray diffraction study indicates that polycrystalline zinc nitride films are of cubic structure with the lattice constant a = 0.979(1) nm and have preferred orientations with (3 2 1) and (4 4 2). Its absorption coefficients as well as the film thickness are calculated from the transmission spectra, which are measured with a double beam spectrophotometer. The optical band gap has been determined from the photon energy dependence of absorption coefficient, an indirect transition optical band gap of 2.12(3) eV has been obtained.     

含1,2-亚乙基单元的双酚A聚碳酸酯非光气法合成和表征

以双酚A(BPA),碳酸乙二酯(EC)和碳酸二甲酯(DMC)为原料,制备双酚A二元醇(Ⅰ)和双酚A碳酸酯(Ⅱ),并用红外光谱与核磁共振波谱对其结构进行表征.通过Ⅰ与Ⅱ的共缩聚反应及Ⅱ的自聚实现了主链中含有—CH2CH2—单元的双酚A型聚碳酸酯(PC)的非光气法合成,用凝胶渗透色谱法(GPC)和TGA-DSC对PC的分子量和热性质进行分析.结果表明,Ⅱ在240℃自聚6h后产物的Mn可达17.6×103,主链中—CH2CH2—单元的引入,可以降低聚合物的Tg,提高其结晶性,所得聚合物具有良好的热稳定性.     

Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (1 0 0) substrates by MOCVD

Epitaxial In₂O₃ films have been deposited on Y-stabilized ZrO₂ (YSZ) (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). The films were deposited at different substrate temperatures (450-750 °C). The film deposited at 650 °C has the best crystalline quality, and observation of the interface area shows a clear cube-on-cube epitaxial relationship of In₂O₃(1 0 0)||YSZ(1 0 0) with In₂O₃[0 0 1]||YSZ[0 0 1]. The Hall mobility of the single-crystalline In₂O₃ film deposited at 650 °C is as high as 66.5 cm² V⁻¹ s⁻¹ with carrier concentration of 1.5 × 10¹⁹ cm⁻³ and resistivity of 6.3 × 10⁻³ Ω cm. The absolute average transmittance of the obtained films in the visible range exceeds 95%.     

Synthesis and thermal stability of Zn3N2 powder

This paper reports that Zn₃N₂ powder of high quality has been synthesized by a nitridation reaction of Zn powder with NH₃ gas (flow rate 500 ml/min) at the nitridation temperature of 600 °C for 120 min. X-ray diffraction indicates that Zn₃N₂ is cubic in structure with the lattice constant being a=9.788 Å. X-ray photoelectron spectroscopy shows the differences of chemical bonding states between Zn₃N₂ and ZnO, and confirms the formation of N-Zn bonds. Thermal gravimetric analysis and differential thermal analysis are employed to investigate the thermal decomposition behavior of Zn₃N₂ powder. It is found that Zn₃N₂ is unstable when exposed to open air above 500 °C.     

低压近场静电纺丝ZnO/PVDF复合微米纤维阵列的制备及压力传感性

利用低压近场静电纺丝技术制备了ZnO/PVDF(聚二偏氟乙烯)微米纤维平行阵列, 通过光学显微镜、扫描电子显微镜(SEM)和X射线能量色散光谱(EDS)对ZnO/PVDF微米纤维进行了表征. 该复合纤维的平均直径约为40 μm. EDS分析测试证明ZnO纳米颗粒已经掺杂进入了平行微米纤维中. 压电性能和电学性能测试结果表明, ZnO/PVDF微米纤维阵列的压电性能增强. 研究结果表明, 近场电纺丝ZnO/PVDF复合微米纤维阵列在压电型压力传感器和纳米发电机领域具有潜在的应用价值.