Thermal interdiffusion in InGaAs/GaAs and GaAsSb/GaAs strained quantum wells as a function of doping density

We studied the thermal stability and interdiffusion of InGaAs/GaAs and GaAsSb/GaAs single quantum wells as a function of temperature for both Be and Si doping at various doping concentrations. The interdiffusion was monitored using the photoluminescence from the ground states of the valence- and conduction-band quantum wells. Using a Green's function method to solve the diffusion equation, assuming Fick's law behaviour, the evolution of the well shape during annealing was determined, and Schrödinger's equation was solved for this well shape to provide the ground-state energy levels of the system using the diffusion constant as the only fitting parameter. The validity of this model as applied to both systems is discussed.Strained Layer Structures Research Group.     

Stress and deformation analysis from reduced-scale plastic-model testing

The use of scale models, which are made from plastic material, for stress and deformation analysis of missile nose-cone structures is discussed. The special strain-gage application and testing techniques, which are required because of the use of plastic materials, are detailed.The utilization of relatively inexpensive simplified models for the investigation of two specific design conditions is cited. The first case is a stress and deformation study of a thin, constant-thickness, shallow spherical shell which is supported by a circumferential line reaction and subjected to uniform external pressure. Comparisons are made with a recently published theoretical analysis of the problem.The second case is a particular design problem which is concerned with the determination of the stress and deformation in a variable-thickness, shallow spherical shell with several various-size cutouts. The shell is loaded with a varying external-pressure load which is reacted by a circumferential line load at the periphery. Influence curves for both stress and deformation are given.Some limitations of plastic-model testing are reviewed, and guides to successful use of the method are given.Paper was presented at 1959 SESA Spring Meeting held in Washington, D. C. on May 20–22.     

X-ray emission from clusters of galaxies and cosmological parameters

Clusters of galaxies are excellent probes of cosmic structure and evolution. X-ray studies of clusters provide some of their key parameters, viz., temperature of the hot intra-cluster gas, its metallicity, X-ray luminosity and surface brightness giving mass distribution and mass-flow rate in the case of cooling flows. X-ray measurements for a large sample of clusters have lead to estimates of the total gravitating mass in them, which can be compared to the virial masses derived from dynamical considerations and gravitational lensing in some of them. X-ray derived total masses are consistent with masses obtained from the other methods after the effects due to the presence of cooling flows are taken into account in the analyses. Estimated virial masses, lack of evolution in X-ray properties, and detection of several very hot clusters at high redshifts indicate a Universe with a low value (≤ 0.3) for the Ω parameter.     

Light hole transport in a strained GaAs/In0.18Ga0.82As quantum well at high pressures

Abstract

Here we report what we believe to be the first observation of the pressure dependence of the light hole behavior in a modulation doped In_0.18Ga_0.82As/GaAs single strained quantum well grown by MBE. Transport measurements have been undertaken as a function of temperature (4–300K) and hydrostatic pressure (4–8kbar). Hole mobilities of ～17000 cm²/Vs have been obtained for sheet carrier densities of ～3.3×10¹¹ cm^?2. At low temperatures (<100K) persistent photogenerated holes have been observed. The hole mobility is found to decrease with increasing pressure at a rate intermediate between that typically observed for holes and electrons in bulk III-V semiconductors.     

Photoluminescence of InGaAs/GaAs strained-layer quantum well structures under high pressure

Abstract

Measurements of the photoluminescence (PL) of strained In_0.2Ga_0.8As/GaAs and In_0.15Ga_0.85As/GaAs quantum well structures together with the PL from bulk GaAs, in a diamond anvil cell show that the pressure coefficient of the ground confined state in the wells depends upon well width (L_Z). In the thinnest wells, the coefficient is closer to that of the bulk GaAs (10.7 meV/kbar), as expected. However, in the widest wells the coefficients tend to values (9.5meV/kbar for the 15% alloy and 9.1meV/kbar for the 20% alloy) that are significantly lower than the pressure coefficient of unstrained In_0.53Ga_0.47As (10.9meV/kbar). It is found that the low pressure coefficients can not be explained by the change in uniaxial stress with pressure due to a difference in bulk moduli between the barrier and well.     

Exotic decay in cerium isotopes

Half life for the emission of exotic clusters like ⁸Be, ¹²C, ¹⁶O, ²⁰Ne, ²⁴Mg and ²⁸Si are computed taking Coulomb and proximity potentials as interacting barrier and many of these are found well within the present upper limit of measurement. These results lie very close to those values reported by Shanmugam et al using their cubic plus Yukawa plus exponential model (CYEM). It is found that ¹²C and ¹⁶O emissions from ¹¹⁶Ce and ¹⁶O from ¹¹⁸Ce are most favorable for measurement (T _1/2<10¹⁰ s). Lowest half life time for ¹⁶O emission from ¹¹⁶Ce stress the role of doubly magic ¹⁰⁰Sn daughter in exotic decay. Geiger-Nuttall plots were studied for different clusters and are found to be linear. Inclusion of proximity potential will not produce much deviation to linear nature of Geiger-Nuttall plots. It is observed that neutron excess in the parent nuclei slow down the exotic decay process. These findings support the earlier observations of Gupta and collaborators using their preformed cluster model (PCM).     

Microfabricated planar glass gas chromatography with photoionization detection

We report the development of a microfabricated gas chromatography system suitable for the separation of volatile organic compounds (VOCs) and compatible with use as a portable measurement device. Hydrofluoric acid etching of 95 × 95 mm Schott B270 wafers has been used to give symmetrical hemi-spherical channels within a glass substrate. Two matching glass plates were subsequently cold bonded with the channels aligned; the flatness of the glass surfaces resulted in strong bonding through van der Waals forces. The device comprised gas fluidic interconnections, injection zone and 7.5 and 1.4 m long, 320 μm internal diameter capillaries. Optical microscopy confirmed the capillaries to have fully circular channel profiles. Direct column heating and cooling could be achieved using a combination of resistive heaters and Peltier devices. The low thermal conductivity of glass allowed for multiple uniform temperature zones to be achieved within a single glass chip. Temperature control over the range 10–200 °C was achieved with peak power demand of approximately 25 W. The 7.5 m capillary column was static coated with a 2 μm film of non-polar dimethylpolysiloxane stationary phase. A standard FID and a modified lightweight 100 mW photoionization detector (PID) were coupled to the column and performance tested with gas mixtures of monoaromatic and monoterpene species at the parts per million concentration level. The low power GC-PID device showed good performance for a small set of VOCs and sub ng detection sensitivity to monoaromatics.     

Optimising dislocation-engineered silicon light-emitting diodes

This article presents a study of the possibilities of optimising the electroluminescence (EL) efficiency of dislocation-engineered silicon light-emitting diodes (DELEDs). The diodes were produced by implantation of boron in n-type (100)Si wafers, at a constant ion energy and fluence, of 30 keV and 1×10¹⁵ ions/cm², respectively. The density and the areal coverage by dislocation loops were varied by applying different annealing times in a rapid thermal processing, from 30 s to 60 min. It is shown that the EL efficiency is directly correlated to the number and areal coverage by the loops. The highest population of loops, ∼5×10⁹ /cm², and an areal coverage of around 50% were achieved for 1–5 min annealing. This loop distribution results in optimal DELEDs, having the highest EL response and the largest increase of EL intensity with operating temperature (80–300 K). The results of this work confirm a previously introduced model of charge-carrier spatial confinement by a local stress induced by the edge of the dislocation loops, preventing carrier diffusion to non-radiative recombination centres and enhancing radiative transitions at the silicon band edge. PACS 85.60.Jb; 78.60.Fi; 61.72.Tt     

Preparation and characterization of MgB2 superconductor

The MgB₂ superconductor, synthesized using solid-state and liquid-phase sintering methods, have been characterized for various properties. The upper critical field, irreversibility line and critical current density have been determined using magnetization data. The current-voltage characteristics recorded under an applied magnetic field revealed the existence of vortex glass transition. The surface analysis using X-ray photoelectron spectroscopy shows that MgB₂ is sensitive to atmospheric degradation.