Ultrafast softening in InMnAs

We have used two-color time-resolved magneto-optical Kerr effect spectroscopy to manipulate and detect dynamic processes of spin/magnetic order in a ferromagnetic semiconductor InMnAs. We observed ultrafast photo-induced “softening” (i.e., transient decrease of coercivity) due to spin-polarized transient carriers. This transient softening persists only during the carrier lifetime (2 ps) and returns to its original value as soon as the carriers recombine to disappear. Our data clearly demonstrates that magnetic properties, e.g., coercivity, can be strongly and reversibly modified in an ultrafast manner. We attribute the origin of this unusual phenomenon to carrier-mediated ferromagnetic exchange interactions between Mn ions. We discuss the dependence of data on the pump polarization, pump intensity, and sample temperature. Our observation opens up new possibilities for ultrafast optical manipulation of ferromagnetic order as well as providing a new avenue for studying the dynamics of long-range collective order in strongly correlated many-body systems.     

Ultrafast carrier dynamics in ferromagnetic InGaMnAs

We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons.     

Electron-active cyclotron resonance in p-doped InMnAs in high magnetic fields

We present a theoretical and experimental study of electron-active cyclotron resonance in p-doped InMnAs in high magnetic fields. Results are based on an 8-band Pidgeon–Brown model generalized to include finite k_z effects and s(p)–d exchange interaction between itinerant carriers and Mn d-electrons. The e-active transitions in the valence band in p-doped samples take place due to the nature of multiple valence bands (heavy and light holes). We have calculated the absorption spectra in high magnetic fields and identified optical transitions which contribute to the cyclotron resonance for both e-active and h-active polarizations. Calculations show agreement with experimental results.     

Photoinduced phase transition accompanied with the changes in magnetic properties

Recently, many studies have been started in search for materials which show a photoinduced phase transition (PIPT). In this work, we review two systems as typical examples of PIPT accompanied with changes in magnetic characteristics; (1) organo-metal complex [Fe(2-pic)₃]Cl₂ EtOH (2-pic = 2-amino-methyl-pyridine) and (2) III-V based magnetic semiconductors (In_1-x , Mn _x )As. In the former case, we show several nonlinear characteristics in dynamical process of photoinduced spin state transition from low-spin to high-spin states. In the latter one, photocarrier-induced ferromagnetic order has been observed by both magnetic and transport measurements.     

Effect of optical spin injection on ferromagnetically coupled Mn spins in the III-V magnetic alloy semiconductor (Ga,Mn)As

We report on the new type of photoinduced magnetization in ferromagnetic (Ga,Mn)As thin films. Optically generated spin-polarized holes change the orientation of ferromagnetically coupled Mn spins and cause a large change in magnetization, being 15% of the saturation magnetization, without the application of a magnetic field. The memorization effect has also been found as a trace after the photoinduced magnetization. The observed results suggest that a small amount of nonequilibrium carrier spins can cause collective rotation of Mn spins presumably through the p-d exchange interaction.     

Optical manipulation of coupled spins in magnetic semiconductor systems: A path toward spin optoelectronics

Experimental results based on the optical excitations in the III–V-based ferromagnetic semiconductors are reviewed. On the bases of results obtained by both cw- and femto-second-pulse optical excitation, we point out the feasibility of magnetization rotation in the hole-mediated ferromagnetic semiconductor (Ga,Mn)As via the angular momentum and photon energy of light. Here, p–d exchange interaction is the effective channel that transmits a small change in spin axis of the valence band to the ferromagnetically coupled Mn spin sub-system. Within the limit of this picture, we also discuss a hole–Mn spin complex for which hole and Mn spins rotate and relax together upon optical excitation. Partial magnetization reversal observed in the experiments of the electrical current injection in (Ga,Mn)As-based magnetic-tunnel-junction devices is also reviewed in view of the effects caused by the spin-polarized holes. Here, we point out that a spin current of 10⁵ A/cm² may be reduced further if spin injection efficiency can be improved by the optimal designs of the device structure.     

Polarization memory of luminescence from photo-generated carriers in aSixC1−x:H (x∼0.2)

Photoluminescence of aSi_xC_1?x:H (x～0.2) is studied with a particular interest on the localization of carriers. Taking the polarization memory of luminescence as a probe, we clarify the localized character of photo-generated carriers as functions of excitation photon energy, emitted photon energy, temperature and time. The picosecond time-resolved measurement of the polarization memory is shown useful to study dynamical relaxation processes of carriers in disordered systems.     

On the outradius of the teichmüller space

Let Γ be a fuchsian group which preserves the unit disc Δ and hence also its complement Δ^* in the Riemann sphere . The Bers embedding represents the Teichm=:uller space T(Γ) of Γ in the space (B (Δ^*, Γ) of bounded quadratic differentials for Γ in Δ^*. Then, T(Γ) is included in the closed ball centred at the origin of radius 6 inB(Δ^*, Γ) with respect to the norm employed in a paper by Nehari [The Schwarzian derivative and Schlicht functions; Bull. Amer. Math. Soc. 55 (1949), 545–551]. In other words the outradiuso(Γ) ofT(Γ) is not greater than 6. The purpose of this paper is to give a complete characterization of a fuchsian group Γ for which the outradiuso(Γ) ofT(Γ) attains this extremal value 6. The main theorem is: Let Γ be a fuchsian group preserving Δ^*. Then the outradiuso(Γ) of the Teichmüller spaceT(Γ) equals 6 if and only if for any positive numberd, either (i) there exists a hyperbolic disc of radiusd precisely invariant under the trivial subgroup, or (ii) there exists the collar of widthd about the axis of a hyperbolic element of Γ. Dedicated to Professor K?taro Oikawa on his 60th birthday