Pressure-induced magnetic transition in Fe2P

The weak field ac susceptibility and the resistivity of Fe₂P single crystals were measured as functions of temperature from 4.2–300 K and as functions of hydrostatic pressures up to 20 kbar, using a newly designed clamp-type pressure cell. The Curie temperature, and the first-order transition temperature, decreased rapidly with increasing pressure, and ferromagnetism vanished at about 13 kbar at 0 K. A second-order transition temperature, as well as the first-order transition, appeared in the region below 170 K and above 5 kbar (triple point) and a new pressure-induced magnetic phase was found. The phase is proposed to be antiferromagnetic for reasons discussed in the paper.     

Magnetization of CeAg at high pressure

Magnetization measurements for CeAg under hydrostatic pressures up to 4.0 kbar and CeAg_1?xIn_x compounds (0.01 ? x ? 0.20) at normal pressure were made at 4.2 K in magnetic fields up to 50 kOe. It was found that the magnetization of CeAg under pressure and of CeAg_1?xIn_x were larger than that of CeAg at normal pressure.     

EXAFS measurements for liquid As2Se3 at high temperatures and pressures

Extended X-ray absorption fine structure (EXAFS) spectra from liquid As₂Se₃ around both the As and Se K-edges in the temperature-pressure range up to 1400°C and about 60 bar were measured. For the EXAFS measurements, a new type of high pressure vessel and a sample cell of own design made of polycrystalline sapphire were developed. Distinct EXAFS oscillations were obtained even at 1400°C. When the semiconductor-to-metal transition occurs at about 1000°C, the local environment around a central As atoms is substantially changes and a new As neighbor site is induced.     

Src Mediates Epigallocatechin-3-O-Gallate-Elicited Acid Sphingomyelinase Activation

Epigallocatechin-3-O-gallate (EGCG) is one of the major bioactive compounds known to be present in green tea. We previously reported that EGCG shows selective toxicity through activation of the protein kinase B (Akt)/cyclic guanosine monophosphate (cGMP)/acid sphingomyelinase (ASM) axis via targeting its receptor 67-kDa laminin receptor (67LR), which is overexpressed in cancer. However, little is known about upstream mechanisms of EGCG-elicited ASM activation. In this study we show that the proto-oncogene tyrosine-protein kinase Src, also known as c-src, plays a crucial role in the anticancer effect of EGCG. We showed that EGCG elicits phosphorylation of Src at Tyr 416, a crucial phosphorylation site for its activity, and that the pharmacological inhibition of Src impedes the upstream events in EGCG-induced cell death signaling including upregulation of Akt activity, increase in cGMP levels, and activation of ASM. Moreover, focal adhesion kinase (FAK), which is involved in the phosphorylation of Src, is colocalized with 67LR. EGCG treatment enhanced interaction of FAK and 67LR. Consistent with these findings, pharmacological inhibition of FAK significantly neutralized EGCG-induced upregulation of Akt activity and activation of ASM. Taken together, FAK/Src play crucial roles in the upstream signaling of EGCG.     

Quantum Hall effect in the bulk semiconductors bismuth and antimony tellurides: Proof of the existence of a current-carrier reservoir

The quantization of the Hall resistivity ρ_xy in the form of plateaus in the dependence of ρ_xy on the magnetic field B is observed in the semiconductors Bi₂Te₃ and Sb₂Te₃; the minima of the transverse magnetoresistivity ρ_xx correspond to the start of the plateaus. The quantization of ρ_xy is due to the presence of a current-carrier reservoir. An impurity band with a high density of states or a different band with a much higher current-carrier effective mass serves as the reservoir. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 11, 754–758 (10 December 1999)     

Magnetic and structural phase transition of CeAg at hydrostatic pressure

Pressure effects on the Curie temperature and the crystallographic phase transition temperature of CeAg were determined from an electrical resistivity measurement from 4.2 to 300 K at hydrostatic pressures up to 5 kb. Results correspond to the alloying effect in Ce(Ag,In).     

Effects of the temperature and the pressure on the intermediate valence of Ce(In1−xSnx)3

The curve of the lattice constant of samples Ce(In_1-xSn_x)₃ plotted as a function of the composition x deviates from the linear Vegard's law; the deviation is found to be much more eminent at liquid N₂ temperature than at room temperature. Effects of the pressure on the electrical resistivity was found to be very large for a sample with a composition x = 0.5 which is near to the critical value of the occurence of the intermediate valence state of Ce atoms. The atomic volume of Ce atoms is seen to play an important role for the occurence of the intermediate valence state.     

Electrical conductivity of GeTe glasses under hydrostatic pressure

The electrical conductivity of some GeTe bulk glasses has been measured between 10 and 80°C under hydrostatic pressure up to 3000 bar. The electrical conductivity (σ) of as-prepared, amorphous samples can be expressed by an equation: σ = A exp (?B/kT). For Ge₁₇Te₈₃ glass, the pressure dependences of the constants, A and B, are: (d ln A/dp) = ?3.2 × 10^?4 bar^?1 and (dB/dp) = ? 2.1 × 10^?5 eV · bar^?1. The results are analysed in terms of the low-mobility band model of Mott-CFO for amorphous semiconductors.     

Pressure-induced magnetic transition in EuSe

The weak field a.c. susceptibility of EuSe was measured as functions of temperature from 1.5 to 15 K and of hydrostatic pressure up to 15 kbar. The Néel temperature did not change with pressure, and a new pressure-induced ferromagnetic phase appeared in the region above 4.6 K and above 4.5 kbar (triple point).