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Potential for micromachined actuation of ultra-wide continuously tunable optoelectronic devices 总被引:1,自引:0,他引:1
H. Hillmer J. Daleiden C. Prott F. Römer S. Irmer V. Rangelov A. Tarraf S. Schüler M. Strassner 《Applied physics. B, Lasers and optics》2002,75(1):3-13
Tailored scaling represents a principle of success that, both in nature and in technology, allows the effectiveness of physical
effects to be enhanced. Mutation and selection in nature are imitated in technology, e.g. by model calculation and design.
Proper scaling of dimensions in natural photonic crystals and our fabricated artificial 1D photonic crystals (DBRs, distributed
Bragg reflectors) enable efficient diffractive interaction in a specific spectral range. For our optical microsystems we illustrate
that tailored miniaturization may also increase the mechanical stability and the effectiveness of spectral tuning by thermal
and electrostatic actuation, since the relative significance of the fundamental physical forces involved considerably changes
with scaling. These basic physical principles are rigorously applied in micromachined 1.55-μm vertical-resonator-based devices.
We modeled, implemented and characterized 1.55-μm micromachined optical filters and vertical-cavity surface-emitting laser
devices capable of wide, monotonic and kink-free tuning by a single control parameter. Tuning is achieved by mechanical actuation
of one or several air-gaps that are part of the vertical resonator including two ultra-highly reflective DBR mirrors of strong
refractive index contrast: (i) Δn=2.17 for InP/air-gap DBRs (3.5 periods) using GaInAs sacrificial layers and (ii) Δn=0.5
for Si3N4/SiO2 DBRs (12 periods) with a polymer sacrificial layer to implement the air-cavity. In semiconductor multiple air-gap filters,
a continuous tuning of >8% of the absolute wavelength is obtained. Varying the reverse voltage (U=0–5 V) between the membranes
(electrostatic actuation), a tuning range of >110 nm was obtained for a large number of devices. The correlation of the wavelength
and the applied voltage is accurately reproducible without any hysteresis. In two filters, tuning of 127 and 130 nm was observed
for about ΔU=7 V. The extremely wide tuning range and the very small voltage required are record values to the best of our
knowledge. For thermally actuated dielectric filters based on polymer sacrificial layers, Δλ/ΔU=-7 nm/V is found.
Received: 10 May 2002 / Published online: 8 August 2002 相似文献
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Ronny Kleinhempel Gunar Kaune Matthias Herrmann Hartmut Kupfer Walter Hoyer Frank Richter 《Mikrochimica acta》2006,156(1-2):61-67
Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy
target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural,
electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition
rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min−1 could be achieved. This corresponds to a static deposition rate of 200 nm min−1. The lowest electrical resistivity of 1.1·10−3 Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency
in the visible range corresponding to extinction coefficients being below 10−2. X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition
mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222)
oriented. Compared to undoped In2O3 all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown
in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress
in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa. 相似文献