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Amorphous TaOx thin films were deposited at different temperatures, and the resistance switching properties of the Pt/TaOx/Pt structure were investigated. X‐ray photoelectron spectroscopy showed that the amount of Ta2O5 in the film decreased and the content of Ta suboxides increased substantially when the growth temperature was increased. Unipolar resistance switching near the anode was stable only for TaOx film grown at room temperature. The experimental results revealed the critical effect of the film composition on the resistance switching behavior of TaOx films. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Octolia Togibasa Tambunan Hadiyawarman Tukiman Kadek Juliana Parwanta Da Woon Jeong Chang Uk Jung Seuk Joo Rhee Chunli Liu 《Superlattices and Microstructures》2012
We deposited SrCu2O2 (SCO) films on sapphire (Al2O3) (0 0 0 1) substrates by pulsed laser deposition. The crystallographic orientation of the SCO thin film showed clear dependence on the growth temperature. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis showed that the film deposited at 400 °C was mainly oriented in the SCO [2 0 0] direction, whereas when the growth temperature was increased to 600 °C, the SCO film showed a dominant orientation of SCO [1 1 2]. The SCO film deposited at 500 °C was obvious polycrystalline, showing multi peaks from (2 0 0), (1 1 2), and (2 1 1) diffraction in the XRD spectrum. The SCO film deposited at 600 °C showed a band gap energy of 3.3 eV and transparency up to 80% around 500 nm. The photoluminescence (PL) spectra of the SCO films grown at 500 °C and 600 °C mainly showed blue-green emission, which was attributed to the intra-band transition of the isolated Cu+ and Cu+–Cu+ pairs according to the temperature dependent-PL analysis. 相似文献
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