Particle Characterization by Projected Area Determination

The projected areas of non-spherical particles do not represent an unambiguous particle characteristic. Depending on the orientation towards a constant observational direction, different projected areas result. The spectrum of all projected area values of a particle, if determined representatively, gives the probability with which a certain value is obtained by a single measurement. In this work, the frequency distributions of different examples of test objects were both calculated and measured. The objects were a cube, a rectangular parallelepiped and also three model agglomerates consisting of spheres of the same size. Instead of just one projected area, during each measuring procedure three projected areas from three orthogonal directions can be obtained. A mean value is then calculated to reduce the ambiguity of the particle characteristic and enhance the resolution. A suitable measurement set-up is introduced. The results of calculation and measurement are compared for observation from just one direction and also simultaneous observation from three directions. The frequency distributions of the equivalent diameters of the particle projected areas show a characteristic trend of the total curve with remarkable properties. The simultaneous measurement of three values from mutually orthogonal directions and their mean value calculation result in a much narrower distribution. In this case, a non-sphericity factor can additionally be calculated, whose frequency distribution contains information in a characteristic manner about the degree to which the particle shape differs from a sphere.     

Simulation of Nanoparticle Production in Premixed Aerosol Flow Reactors by Interfacing Fluid Mechanics and Particle Dynamics

The interaction of fluid mechanics and particle dynamics at the very early stages of flame synthesis largely affects the characteristics of the product powder. Detailed simulations provide a better understanding of these processes, which take place in a few milliseconds, and offer the possibility to influence the product characteristics by intelligent selection of the process parameters. The present paper reports on the simulation of titania powder formation by TiCl₄ oxidation in an aerosol flow reactor. A commercially available fluid mechanics code is used for the detailed calculation of the fluid flow and the chemical reaction at non-isothermal conditions. This code is then interfaced with a model for aggregate particle dynamics neglecting the spread of the particle size distribution. The simulation shows the onset of the particle formation in the reactor and calculates the dynamic evolution of the aggregate particle size, number of primary particles per aggregate and the specific surface area throughout the reactor. The presented, newly developed calculation technique allows for the first time the simulation of particle formation processes under the authentic, complex conditions as found in actual aerosol reactors.     

Generalization of the Independent Pair Model to degenerate nuclear states

The equations of the Independent Pair Model for finite nuclei are generalized to nuclear states non describable by a single shell model configuration. As an application of these generalized equations to excited states, the energy of the excitedT=0,J ^π=0⁺ -state of⁴He has been calculated by an approximate solution. Using a spin-averaged square well potential with hard core and Serber exchange character, with all parameters beeing determined from two-nucleon data, the calculation yields an excitation energy of 21.58 MeV compared to the experimental value of about 20.1 MeV.     

Atom probe tomography of size‐controlled phosphorus doped silicon nanocrystals

Doping of silicon nanocrystals is essential to control their electronic and optical properties. The incorporation of an impurity into a silicon nanovolume is a nontrivial task due to the self‐purification effect. Here, a systematic atom probe tomography study of the phosphorus distribution and incorporation in size‐controlled silicon nanocrystals embedded in silicon dioxide is presented. Qualitatively, it turns out that the phosphorus distribution in the system follows a universal, nanocrystal‐size independent trend: phosphorus‐enrichment at the interface with a substantial phosphorus‐incorporation in the silicon nanocrystal as small as 2 nm in diameter. This clearly contradicts strict self‐purification. These observations are explained by the bulk‐solubility and ‐segregation behaviour, kinetic effects related to the diffusion lengths, and nanoscale interface strain. The quantitative determination of the amount of phosphorus atoms per quantum dot enables a systematic understanding of phosphorus‐induced effects on optical and electronic properties of silicon nanovolumes.