The Influence of the Thickness of Silicon- and Oxygen-Doped Hydrogenized Carbon Films on Their Surface Properties

Technical Physics - Hydrogenized carbon films 0.5–7.0 μm thick doped with silicon (11.9 ± 0.4 at %) and oxygen (1.7 ± 0.1 at %) have been grown on VT-6 titanium and...     

Plasma Chemical Synthesis of Amorphous Hydrocarbon Films Alloyed by Silicon,Oxygen and Nitrogen

Russian Physics Journal - The paper presents the synthesis of amorphous hydrocarbon (a-C:H) films alloyed by silicon, oxygen and nitrogen. The films obtained in polyphenyl methylsiloxane vapor and...     

Dependence of Mechanical and Tribological Properties of a-C:H:SiOx Films on the Bias Voltage Amplitude of the Substrate

Technical Physics - The surface of AISI 316L stainless steel has been modified by depositing an a-C:H:SiOx film using plasma-assisted chemical vapor-phase deposition with the application of a...     

Deposition of silicon–carbon coatings from the plasma of a non-self-sustained arc discharge with a heated cathode

Amorphous hydrogenated carbon doped with silicon oxide (a-C:H:Si:O), which is referred to as silicon–carbon coatings in this work, consists of thin amorphous films, which are used as commercial solid lubricants due to their higher stability under extreme environmental conditions as compared to amorphous hydrogenated carbon. The deposition of silicon–carbon coatings from the plasma of a non-self-sustained arc discharge with a heated cathode is considered. Silicon–carbon coatings are deposited using polyphenul methylsiloxane as a precursor at a flow rate of 0.05 mL/min in an argon atmosphere at a pressure of 0.1 Pa. A high-frequency power supply is used to apply a high-frequency bias voltage to a substrate during deposition. After deposition, the mechanical properties of the coatings are studied. The maximum hardness of the coating is 20 GPa at a minimum friction coefficient of 0.16 and a wear rate of 1.3 × 10^–5 mm³ N^–1 m^–1. Energy dispersive analysis shows that the coatings contain a significant content of carbon and oxygen (about 80 and 15%, respectively) and a low content of silicon (about 5%).