首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   101篇
  免费   0篇
  国内免费   2篇
化学   47篇
力学   1篇
数学   23篇
物理学   32篇
  2023年   3篇
  2017年   1篇
  2016年   1篇
  2014年   2篇
  2012年   5篇
  2011年   3篇
  2010年   4篇
  2009年   5篇
  2008年   6篇
  2007年   5篇
  2006年   1篇
  2005年   3篇
  2004年   6篇
  2003年   5篇
  2002年   1篇
  1999年   1篇
  1998年   2篇
  1997年   1篇
  1996年   1篇
  1995年   3篇
  1994年   3篇
  1993年   1篇
  1992年   1篇
  1991年   2篇
  1990年   3篇
  1989年   2篇
  1983年   4篇
  1982年   2篇
  1981年   1篇
  1980年   1篇
  1979年   5篇
  1978年   3篇
  1977年   2篇
  1976年   1篇
  1975年   2篇
  1974年   2篇
  1973年   2篇
  1972年   1篇
  1935年   3篇
  1933年   1篇
  1914年   1篇
  1890年   1篇
排序方式: 共有103条查询结果,搜索用时 15 毫秒
1.
The paper is devoted to superposition operators acting between Hölder spaces, for which we prove continuity properties and Fréchet-differentiability under assumptions being weaker than those so far known in the literature.  相似文献   
2.
3.
We report an experimental realization of one-way quantum computing on a two-photon four-qubit cluster state. This is accomplished by developing a two-photon cluster state source entangled both in polarization and spatial modes. With this special source, we implemented a highly efficient Grover's search algorithm and high-fidelity two-qubit quantum gates. Our experiment demonstrates that such cluster states could serve as an ideal source and a building block for rapid and precise optical quantum computation.  相似文献   
4.
5.
6.
7.
8.
This paper presents a novel technology of lateral profile engineering addressing nonuniform-channel MOS devices. For the first time MOS devices with highly nonuniform 2-D doping profiles are achieved by post-processing implantation of channel doping peaks. By reducing the thermal budget to a single anneal/activation step, any unintentional broadening or washout of the doping profiles is avoided. We demonstrate the feasibility of this scheme in terms of trap generation and damage, and the appropriateness of this approach to explore nonuniform-channel MOS devices. As predicted by simulations, the Ion/Ioff ratio of MOS devices is greatly improved by the introduction of peaking channel dopings. These devices are much less prone to hot-carrier degradation due to reduced electric fields, are less affected by drain induced barrier lowering (DIBL) and exhibit improved resistance to punch through, thus being easier to scale into the ultra-deep-submicron regime. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +43-1/58801-36291, E-mail: alois.lugstein@tuwien.ac.at  相似文献   
9.
The behavior of supersonic mixing layers under three conditions has been examined by schlieren photography and laser Doppler velocimetry. In the schlieren photographs, some large-scale, repetitive patterns were observed within the mixing layer; however, these structures do not appear to dominate the mixing layer character under the present flow conditions. It was found that higher levels of secondary freestream turbulence did not increase the peak turbulence intensity observed within the mixing layer, but slightly increased the growth rate. Higher levels of freestream turbulence also reduced the axial distance required for development of the mean velocity. At higher convective Mach numbers, the mixing layer growth rate was found to be smaller than that of an incompressible mixing layer at the same velocity and freestream density ratio. The increase in convective Mach number also caused a decrease in the turbulence intensity ( u/U).List of symbols a speed of sound - b total mixing layer thickness between U 1 – 0.1 U and U 2 + 0.1 U - f normalized third moment of u-velocity, f u3/(U)3 - g normalized triple product of u2 , g u2/(U)3 - h normalized triple product of u 2, h u 2/(U)3 - l u axial distance for similarity in the mean velocity - l u axial distance for similarity in the turbulence intensity - M Mach number - M c convective Mach number (for 1 = 2), M c (U 1U 2)/(a 1 + a 2) - P static pressure - r freestream velocity ratio, r U 2/U 1 - Re unit Reynolds number, Re U/ - s freestream density ratio, s 2/1 - T t total temperature - u instantaneous streamwise velocity - u deviation of u-velocity, uuU - U local mean streamwise velocity - U 1 primary freestream velocity - U 2 secondary freestream velocity - average of freestream velocities, (U 1 + U 2)/2 - U freestream velocity difference, U U 1U 2 - instantaneous transverse velocity - v deviation of -velocity, V - V local mean transverse velocity - x streamwise coordinate - y transverse coordinate - y 0 transverse location of the mixing layer centerline - ensemble average - ratio of specific heats - boundary layer thickness (y-location at 99.5% of free-stream velocity) - similarity coordinate, (yy 0)/b - compressible boundary layer momentum thickness - viscosity - density - standard deviation - dimensionless velocity, (UU 2)/U - 1 primary stream - 2 secondary stream A version of this paper was presented at the 11th Symposium on Turbulence, October 17–19, 1988, University of Missouri-Rolla  相似文献   
10.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号