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In this work, the effect of the thermal annealing atmosphere on the structural, optical and electrical properties of the sulfosalt SnSb2S4 films obtained by thermal vacuum evaporation was studied. The samples are annealed at different atmospheres in the temperature range 50−275 °C for 1 h. It is observed that SnSb2S4 films exhibit a dramatic change in their electrical properties at transition temperatures of about 150 °C, 170 °C and 200 °C after an annealing process under air, nitrogen and vacuum atmospheres, respectively. The electrical resistivity measurements suggest that obtained films show ‘semiconducting’ behavior with resistivities between 10 and 100 Ω cm; the annealed films present rather lower resistivities between 10−2 and 10−3 Ω cm and exhibit obvious p+-type semiconductor behavior with a dominant crystalline component. 相似文献
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Physics of the Solid State - The current transport mechanisms in Au|Pt|n-GaN Schottky barrier diodes are investigated in a temperature range of 40–325 K. The calculated barrier height and... 相似文献
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Physics of the Solid State - Using a pseudo-potential approach within the virtual crystal approximation, the elastic properties of YxIn1 – xN semiconductor ternary alloys in... 相似文献
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H. Mosbahi M. Gassoumi Imen Saidi Houcine Mejri C. Gaquière M.A. Zaidi H. Maaref 《Current Applied Physics》2013,13(7):1359-1364
AlGaN/GaN/Si HEMTs grown by molecular beam epitaxy have been investigated using spectroscopy capacitance, direct and pulse current–voltage and small-signal microwave measurements. Passivation of the HEMT devices by SiO2/SiN with NH3 and N2O pretreatments is made in order to reduce the trapping effects. As has been found from DLTS data, some of electron traps are eliminated after passivation. This has led to an improvement in the drain current. To describe the electron transport, we have developed a charge-control model by including the deep traps observed from DLTS experiments. The thermal and trapping effects have been, on the other hand, studied from a comparison between direct-current and pulsed conditions. As a result, a gate-lag and a drain-lag were revealed indicating the presence of deep lying centers in the gate-drain spacing. Finally, small-signal microwave results have shown that the radio-frequency parameters of the AlGaN/GaN/Si transistors are improved by SiO2/SiN passivation and more increasingly with N2O pretreatment. 相似文献
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