全文获取类型
收费全文 | 78篇 |
免费 | 0篇 |
专业分类
化学 | 12篇 |
数学 | 2篇 |
物理学 | 64篇 |
出版年
2014年 | 1篇 |
2013年 | 3篇 |
2012年 | 3篇 |
2011年 | 1篇 |
2009年 | 2篇 |
2008年 | 3篇 |
2006年 | 3篇 |
2005年 | 1篇 |
2004年 | 4篇 |
2003年 | 2篇 |
2001年 | 3篇 |
2000年 | 4篇 |
1999年 | 1篇 |
1998年 | 1篇 |
1996年 | 4篇 |
1994年 | 3篇 |
1993年 | 6篇 |
1992年 | 5篇 |
1991年 | 3篇 |
1990年 | 5篇 |
1989年 | 3篇 |
1988年 | 2篇 |
1987年 | 5篇 |
1986年 | 2篇 |
1983年 | 1篇 |
1980年 | 1篇 |
1979年 | 3篇 |
1978年 | 1篇 |
1977年 | 1篇 |
1966年 | 1篇 |
排序方式: 共有78条查询结果,搜索用时 15 毫秒
1.
L. Feenstra L. M. Andersson J. Schmiedmayer 《General Relativity and Gravitation》2004,36(10):2317-2329
Magnetic microtraps and Atom Chips are safe, small-scale, reliable and flexible tools to prepare ultra-cold and degenerate atom clouds as sources for various atom-optical experiments. We present an overview of the possibilities of the devices and indicate how a microtrap can be used to prepare and launch a Bose-Einstein condensate for use in an atom clock or an interferometer. 相似文献
2.
3.
4.
5.
6.
7.
8.
9.
10.
Gong Gu Luxmi P.J. Fisher N. Srivastava R.M. Feenstra 《Solid State Communications》2009,149(47-48):2194-2198
We fabricated high-mobility field-effect transistors based on epitaxial graphene synthesized by vacuum graphitization of both the Si- and C-faces of SiC. Room-temperature field-effect mobilities >4000 cm2/V s for both electrons and holes were achieved, although with wide distributions. By using a high-k gate dielectric, we were able to measure the transistor characteristics in a wide carrier density range, where the mobility is seen to decrease as the carrier density increases. We formulate a simple semiclassical model of electrical transport in graphene, and explain the sublinear dependence of conductivity on carrier density from the view point of the few-layer graphene energy band structure. Our analysis reveals important differences between the few-layer graphene energy dispersions on the SiC Si- and C-faces, providing the first evidence based on electrical device characteristics for the theoretically proposed energy dispersion difference between graphene synthesized on these two faces of SiC. 相似文献