Multiple-quantum NMR spectra of partially oriented indene: a new approach to estimating order in a nematic phase

Cyclic J cross polarisation (CYCLCROP) is a sensitive method for the noninvasive monitoring of (13)C distributions and fluxes. The PRAWN rotating frame Hartmann-Hahn mixing sequence ameliorates problems associated with sensitivity to Hartmann-Hahn mismatch and reduces RF power deposition. The combination of CYCLCROP with echo planar imaging (EPI) for spatial encoding of the proton detected carbon signal allows efficient use of the available signal to be made, permitting a significant improvement in the temporal resolution of any study. We report here on some initial experiments to demonstrate the feasibility of echo planar proton detected (13)C imaging using CYCLCROP based upon the PRAWN module, including the application of the technique to the measurement of transport and accumulation of (13)C-labelled sucrose in a castor bean seedling. Two methods that can be used to eliminate the effect of the J-splitting in the EP images are presented. In addition, a fast, image-based B(1) field-mapping method which may be used to quantitatively map the low frequency RF field in a dual resonant ((13)C/(1)H) probe is presented. The technique utilises the above described imaging method, permitting fully quantitative, 64x64 axial field maps to be generated in about a minute.     

Asymptotic Analysis of a Bingham Fluid in a Thin Domain with Fourier and Tresca Boundary Conditions

In this paper we prove first the existence and uniqueness results for the weak solution, to the stationary equations for Bingham fluid in a three dimensional bounded domain with Fourier and Tresca boundary condition; then we study the asymptotic analysis when one dimension of the fluid domain tends to zero. The strong convergence of the velocity is proved, and a specific Reynolds limit equation and the limit of Tresca free boundary conditions are obtained.     

Determination of doping effects on Si and GaAs bulk samples properties by photothermal investigations

The knowledge of doping effects on optical and thermal properties of semiconductors is crucial for the development of opto-electronic compounds. The purpose of this work is to investigate these effects by mirage effect technique and spectroscopic ellipsometry SE.

The near gap optical spectra are obtained from photothermal signal for differently doped Si and GaAs bulk samples. However, the above bandgap absorption is determined from SE. These spectra show that absorption in the near IR increases with dopant density and also the bandgap shifts toward low energies. This behavior is due to free carrier absorption which could be obtained by subtracting phonon-assisted absorption from the measured spectrum. This carrier absorption is related to the dopant density through a semi-empirical model.

We have also used the photothermal signal phase to measure the influence of doping on thermal diffusivity.     

Optical and thermal properties of doped semiconductor

The knowledge of doping effects on optical and thermal properties of semiconductors is crucial for the development of optoelectronic compounds. The purpose of this work is to investigate theses effects by mirage effect technique and spectroscopic ellipsometry SE. The absorption spectra measured for differently doped Si and GaAs bulk samples, show that absorption in the near IR increases with dopant density and also the band gap shifts toward low energies. This behavior is due to free carrier absorption which could be obtained by subtracting phonon assisted absorption from the measured spectrum. This carrier absorption is related to the dopant density throw a semi-empirical model.     

Photothermal investigation study of porous silicon layer doped lithium

This paper presents a series of experimental photothermal deflection technique (PTD) spectra of porous silicon layers doped with lithium on crystalline silicon backing (PS/Li) and their numerical analysis. The aim of this work is to investigate the influence of Li doping on the opto-thermal properties (optical absorption, band-gap energy, thermal diffusivity and thermal conductivity). Also, we correlate these results with other evaluation studies such as I–V measurements and atomic force microscope analysis performed on the material. We observe a red shift of the gap, which can be related to the reduction of crystallite size. Moreover, we notice a decrease of thermal properties with the same behavior as electrical conductivity.     

Structural,morphologic and optical characterization of In(2−x)Al x S3

Aluminum-doped indium sulfide thin films are deposited on glass by spray pyrolysis technique. The structure and the surface morphology of these films were characterized by X-ray diffraction and atomic force microscopy. The effects of aluminum ratio z and substrate temperature T _s, on the film structure and grain size are discussed. The influence of aluminum ratio on surface morphology is revealed by scanning electron microscope. Besides, energy dispersive spectrometry technique is used to compare atomic aluminum concentration in the film with aluminum ratio z in spray solution. Optical properties are studied by a spectrophotometer in the wavelength range 350–850 nm, at room temperature. Optical transmission and grain size are found to be maximal for z = 1.8 %. Moreover, band-gap energy is found to increase with aluminum ratio.     

Some properties of the <Emphasis Type="Italic">ɛ</Emphasis><Subscript>∞</Subscript>-product of quotient bornological spaces

Some properties of the ? _∞-product defined in [4] are obtained by a study of a kind of isomorphism between the computation of this ? _∞-product and the ordinary ?-product of L. Schwartz [9]. The paper contains several corollaries.     

Effect of Si doping on optical and thermal properties of MOVPE GaN thin layers

Photothermal deflection spectroscopy is used to investigate thermal and optical properties of MOVPE grown GaN thin layers deposited on sapphire substrate. The effects of Si doping on absorption spectrum and gap energy are revealed. Also, doping-induced free carrier absorption is extracted from absorption in the sub-gap region. Moreover, the variations of photothermal signal versus modulation frequency are used to determine thermal properties of these films. The measured thermal conductivity is clearly decreased by Si doping, the main reason should be the phonon scattering on point defects.     

Determination of free-carrier and phonon-assisted absorptions for Si-doped GaSb thin layers

Photothermal deflection spectroscopy is used in order to investigate near- and sub-band gap absorption of Si-doped GaSb epilayers deposited by MBE on a semi-insulating GaAs substrate. The optical absorption spectra show an extra absorption on the transparency region below the bandgap due to free-carrier absorption. However, for energies above the gap, we notice a linear behavior of the square root of the absorption coefficient versus the heating beam energy, which is attributed to phonon-assisted absorption. From interpolation of the phonon absorption to low energies we have determined the free-carrier absorption that is found to follow the Drude law.