Knots and random walks in vibrated granular chains

We study experimentally statistical properties of the opening times of knots in vertically vibrated granular chains. Our measurements are in good qualitative and quantitative agreement with a theoretical model involving three random walks interacting via hard-core exclusion in one spatial dimension. In particular, the knot survival probability follows a universal scaling function which is independent of the chain length, with a corresponding diffusive characteristic time scale. Both the large-exit-time and the small-exit-time tails of the distribution are suppressed exponentially, and the corresponding decay coefficients are in excellent agreement with theoretical values.     

Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres

We report on the growth of silicon nanowires on photostructurable glass by low-pressure chemical vapour deposition. Thereby, no additional catalyst was needed to stimulate the growth process. Instead, a self-organized crystallization process leads to the formation of metallic clusters and seed crystals within the glass, which are supposed to initialize the nanowire growth. The nanowires were contacted by direct deposition of Pt using a focussed ion beam system and characterized electrically.     

External noise and its interaction with spatial degrees of freedom in nonlinear dissipative systems

A brief introduction to the field is given together with an overview of the lectures given at the workshop on External Noise and its Interaction with Spatial Degrees of Freedom in Nonlinear Dissipative Systems organized by the Center for Nonlinear Studies at Los Alamos, March 28–31, 1988. It is hoped that the publication of papers presented at the workshop in a single issue of theJournal of Statistical Physics will help draw attention to the recent developments in this rapidly area of nonequilibrium phenomena.     

Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis

The thickness of the altered layer created by ion bombardment of the 6H–SiC single crystal was determined by means of Auger electron spectroscopy (AES) depth profiling in conjunction with factor analysis. After pre-bombardment of the surface by argon ions with energies 1, 2 and 4 keV until the steady state, the depth profiles of the induced altered layers were recorded by sputtering with low energy argon ions of 300 eV. Since the position and shape of the carbon Auger peak depend on the perfection of the crystalline structure, they were used for depth profile evaluation by factor analysis. In this way the depth profiles of the damaged surface region could be estimated in dependence on the ion energy. As a result, the thickness of the altered layer of SiC bombarded with 1, 2 and 4 keV Ar ions using an incident angle of 80° as well as the corresponding argon implantation profile could be measured.     

Sputtering of SiC with low energy He and Ar ions under grazing incidence

The effect of low energy sputtering under grazing incidence upon the surface composition of SiC was investigated by Auger electron spectroscopy. The energy of the sputtering projectiles (He, Ar) varied from 200 to 1500?eV. Peak shifts to the higher energies with increasing argon ion energy were observed for all silicon and carbon Auger transitions. These shifts were explained by enhanced damage of the surface region within the sampling depth of the Auger electrons. The insensitivity of the Auger peak position to the energy of helium ions indicates that the damage state in the surface region does not change with the increasing energy of helium ions. An increase of the carbon concentration with the decrease of the argon energy was observed. The experiments were accompanied by dynamic Monte Carlo simulations by the TRIDYN code.     

Interpretation of Auger depth profiles of thin SiC layers on Si

Silicon carbide thin films, prepared by carbonization of Si-wafers are analysed by Auger depth profiling. The influence of atomic mixing is simulated with a Monte Carlo model. By using mixing simulations the dependence of the two mixing parameters (width of the mixing zone and recoil depth) on ion beam energy, incidence angle and ion mass can be calculated. For comparison of the simulated data with Auger measurements an Auger electron escape depth correction is necessary. The simulated and -corrected data of several layer structures show good qualitative agreement with Auger depth profiles of thin carbonized SiC-layers.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday