Effect of surface composition on melting of thin InSb films

We demonstrate the possibility of melting thin (0.1–0.5 μm) InSb films directly in atmosphere under the protective layer of native oxides to obtain high mobility of majority carriers (up to 25 000 cm²/V s). The features of the film synthesis process based on thermal pulsed evaporation of InSb powder in vacuum are studied experimentally. Such a technique makes it possible to provide necessary compositional inhomogeneity of the deposited film for subsequent melting in air.     

Deposition of NiFe(200) and NiFe(111) textured films onto Si/SiO<Subscript>2</Subscript> substrates by DC magnetron sputtering

The effect of substrate temperature T_sub and bias voltage U_bias on the texture of NiFe films with thickness d ～ 30–340 nm deposited by DC magnetron sputtering onto Si(111)/SiO₂ substrates under working gas pressure ～ 0.2 Pa has been investigated. It has been demonstrated that films grown at room substrate temperature have the (111) texture that is refined under a negative bias voltage. The deposition of films onto a grounded (U_bias ～ 0) substrate heated to T_sub ～ 440–640 K results in the formation of textured NiFe(200) films.     

Refractive index and lattice constant of zinc oxide films modified in a low-temperature plasma

The crystallographic and optical properties of ZnO films obtained in the recombination burning zone of a low-temperature plasma are investigated. The refractive index is determined, and its correlation with the lattice constant along the c axis is found. A planar homogeneous structure consisting of two ZnO films with different refractive indices is fabricated to demonstrate areas of application of the technique suggested.     

Synthesis of ordinary-and inclined-texture zinc oxide films in an inhomogeneous gas-discharge plasma

Zinc oxide films having ordinary and inclined texture were grown on extended amorphous substrates. It was shown that a desired structure can be provided by controlling charged particle fluxes with the substrate remaining parallel to the target plane. Experiments were performed in a dc magnetron sputterer in a mixture of argon and oxygen. The textured films were studied by X-ray diffraction and by exciting longitudinal and shear bulk acoustic waves.     

The effect of GaAs(001) substrate roughness on the magnetic properties of epitaxial Fe films

The effect of GaAs(001) surface roughness on the magnetic properties of MBE-grown Fe films having a thickness t in the interval from 12 to 140 Å is investigated by the ferromagnetic resonance method. The films were deposited at room temperature with rates of 9 and 3 Å/min. For films grown on substrates with the rms deviation of the roughness σ≈10 and 30 Å, the spectrum is essentially dependent on the relationship between t and σ. At t≤σ and t≥3σ, a single absorption line is observed, whereas at σ≤t≤3σ, two absorption lines are present. These features of the spectra are related to the island growth of the films and the influence of roughness on island coalescence.     

Effect of Bias Voltage and Deposition Rate on the Structure and Coercivity of NiFe Films

Physics of the Solid State - The effect of the bias voltage Ub and the deposition rate $${v}$$ on the structure, grain size D, and coercivity Hc of NiFe films with a thickness d from 30 to 980 nm,...     

Magnetron sputtering of thin Cu(200) films on Ni(200)/SiO2/Si substrates

The possibility of oriented growth of thin copper films with a (200) texture on a SiO₂/Si substrate by magnetron sputtering in medium vacuum is demonstrated for the case when a predeposited nickel layer with a (200) texture serves as an orienting sublayer.     

Magnetic properties of thermally deposited Fe/GaAs(100) thin films

Thin (50–200 Å) films of iron have been prepared on (100) gallium arsenide substrates by thermal evaporation at a deposition rate of 3–30 Å/s and a pressure of ～10^?5 torr. Dependences of the saturation magnetization, cubic and uniaxial planar anisotropy constants, and the ferromagnetic resonance linewidth on the film thickness were studied by ferromagnetic resonance at 9.8 GHz. It has been found that the parameters of thermally deposited Fe/GaAs (001) films are comparable to those achieved with molecular-beam epitaxy.     

Magnetoelastic Properties of Yttrium–Iron Garnet Films Manufactured by Means of Ion-Beam Sputtering onto Si and GaAs Substrates

Technical Physics - The effect is studied of tensile deformations on the spectrum of the ferromagnetic resonance of submicron yttrium–iron garnet polycrystalline films manufactured by means...