The carrier “antibinding” in quantum dots: a charge separation effect

We show that the carrier “antibinding” observed recently in semiconductor quantum dots, i.e., the fact that the ground state energy of two electron-hole pairs goes above twice the ground-state energy of one pair, can entirely be assigned to a charge separation effect, whatever its origin. In the absence of external electric field, this charge separation comes from different “spreading-out” of the electron and hole wavefunctions linked to the finite height of the barriers. When the dot size shrinks, the two-pair energy always stays below when the barriers are infinite. On the opposite, because barriers are less efficient for small dots, the energy of two-pairs in a dot with finite barriers, ends by behaving like the one in bulk, i.e., by going above twice the one-pair energy when the pairs get too close. For a full understanding of this “antibinding” effect, we have also reconsidered the case of one pair plus one carrier. We find that, while the carriers just have to spread out of the dot differently for the “antibinding” of two-pairs to appear, this “antibinding” for one pair plus one carrier only appears if this carrier is the one which spreads out the less. In addition a remarkable sum rule exists between the “binding energies” of two pairs and of one pair plus one carrier.     

Symmetries and the polarized optical spectra of exciton complexes in quantum dots

A systematic and simple theoretical approach is proposed to analyze true degeneracies and polarized decay patterns of exciton complexes in semiconductor quantum dots. The results provide reliable spectral signatures for efficient symmetry characterization, and predict original features for low C(2v) and high C(3v) symmetries. Excellent agreement with single quantum dot spectroscopy of real pyramidal InGaAs/AlGaAs quantum dots grown along [111] is demonstrated. The high sensitivity of biexciton quantum states to exact high symmetry can be turned into an efficient uninvasive postgrowth selection procedure for quantum entanglement applications.     

Bell Diagonal and Werner State Generation: Entanglement,Non-Locality,Steering and Discord on the IBM Quantum Computer

We propose the first correct special-purpose quantum circuits for preparation of Bell diagonal states (BDS), and implement them on the IBM Quantum computer, characterizing and testing complex aspects of their quantum correlations in the full parameter space. Among the circuits proposed, one involves only two quantum bits but requires adapted quantum tomography routines handling classical bits in parallel. The entire class of Bell diagonal states is generated, and several characteristic indicators, namely entanglement of formation and concurrence, CHSH non-locality, steering and discord, are experimentally evaluated over the full parameter space and compared with theory. As a by-product of this work, we also find a remarkable general inequality between “quantum discord” and “asymmetric relative entropy of discord”: the former never exceeds the latter. We also prove that for all BDS the two coincide.     

Vectorial electromagnetic modes in V-shaped dielectric waveguides with application to quantum wire devices

The properties of V-shaped optical dielectric waveguides are investigated in detail using a vectorial finite element method. The fundamental modes exhibit extremely tight, heart shaped near field patterns. The maximum intensity of the fundamental mode is found to be vertically shifted with respect to the geometrical center of the waveguide. Fundamental and higher order mode properties are extensively studied, including mode patterns, dispersion curves and polarization properties. The local mode polarization of the two fundamental modes varies from a horizontal (vertical) orientation at the groove center to TM (or TE respectively) far in the side wings. The optimal design of waveguides for GaAs/AlGaAs quantum wire diode lasers and Quantum Confined Stark Effect modulators grown on V-grooved substrates is discussed.     

New lasers and laser schemes

Conclusion We have demonstrated the existence of an anomalous polarization coupling mechanism present in the injection locked TEA CO₂ laser. As a direct consequence of this work, a new injection technique has been formulated which permits efficient injection coupling and maximises energy extraction whilst eliminating the detrimental optical feedback effects to which other injection locking systems are prone.Supported by the Office of Naval Research and the National Science Foundation     

Raman and line centre oscillation selection in coherently pumped four-level fir lasers

Competition between Raman and line-centre oscillation in multilevel lasers pumped with coherent radiation off resonance is studied by means of semi-classical laser theory. In a four level system consisting of a combination of a Λ and V system, it is shown that simultaneous Raman and line centre oscillation is expected on one of the transitions contrary to the case of a simple three level system where the Raman line completely suppresses the line centre oscillation. The crucial importance of a new highly nonlinear phase locking effect for the behaviour of the system is demonstrated.     

Electronic states in hyperbolic-boundary crescent-shaped quantum wires

A fully two-dimensional study of the electronic sub-bands in crescent-shaped quantum wires is presented. The confinement energies and the wave functions are compared by means of an aspect ratio to those produced by the adiabatic approximation. Guidelines for applying the adiabatic model are provided and the adiabatic quantum number classification scheme is discussed. Non- adiabatic states are determined among the first few sub-bands and a built-in dipole is identified. The energy spectrum is explored as a function of wire dimensions achievable by present-day technology. Wire parameters corresponding to maximized sub-band separations are determined.