Large near resonance third order nonlinearity in GaN

We have studied third order nonlinearities, including two-photon absorption coefficient and nonlinear refractive index n ₂, of GaN in below bandgap ultraviolet (UV) wavelength regime by using UV femtosecond pulses. Two-photon absorption was investigated by demonstrating femtosecond UV pulsewidth autocorrelation in a GaN thin film while femtosecond Z-scan measurements revealed information for both n ₂ and . The distribution of n ₂ versus wavelength was found to be consistent with a model described by the quadratic Stark effect, which is the dominant factor contributed to the nonlinear refractive index near the bandgap. Large on the order of 10 cm/GW and large negative n ₂ with a magnitude on the order of several 10^–12 cm²/W were obtained. The at near mid-gap infrared (IR) wavelength was also found to be on the order of several cm/GW by using two-photon-type autocorrelations in a GaN thin film. Taking advantage of the large two-photon absorption at mid-gap wavelengths, we have demonstrated excellent image quality on two-photon confocal microscopy, including two-photon-scanning-photoluminescence imaging and two-photon optical-beam-induced current microscopy, on a GaN Hall measurement sample and an InGaN green light emitting diode.     

Selective area epitaxy of GaN for electron field emission devices

Selective area epitaxy of GaN by MOCVD has been used to fabricate arrays of hexagonal pyramid structures for electron field emission devices. The reactor temperature and pressure have been found to strongly affect the resulting pyramid morphology. Growth at 76 Torr results in improved pyramid shape and uniformity compared to growth at atmospheric pressure. Optimized arrays of pyramids produced emission currents of 80 μA at 1100 V, when biased across 0.5 mm in UHV.