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In 5-benzyl-1,7-di­methyl-4,5,6,7-tetra­hydro-1H-pyrazolo­[3,4-d]­pyrimidine-4,6-dione, C14H14N4O2, which crystallizes in space group P, weak intermolecular C—H⋯O hydrogen bonds generate dimers. The isomeric compound 1-benzyl-5,7-di­methyl-4,5,6,7-tetra­hydro-1H-pyrazolo­[3,4-d]­pyrimidine-4,6-dione, C14H14N4O2, crystallizes in space group P21/n, and shows no such dimerization. Instead, it exhibits C—H⋯π interactions with the phenyl ring. In both structures, the mol­ecules are linked by aromatic π–π-stacking interactions.  相似文献   
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We report synthesis of ZnS quantum dots by chemical method at room temperature. In this technique, ZnS quantum dots are produced by simple chemical reactions where zeolite, acts as matrix, plays the key role in controlling particle growth during synthesis. Quantum dots exhibit luminescence properties such as Zn2+ related emission, efficient low voltage electroluminescence, and super linear voltage-brightness EL characteristics. This study demonstrates the technological importance of semiconductor nanosystems prepared by low cost chemical route.  相似文献   
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Membranes of polyethylene terephthalate, irradiated by O6+ ions at various fluences were characterized by UV/VIS, FTIR, Micro-Raman spectroscopy’s, X-ray diffraction and Atomic force microscopy. UV/VIS measurements indicate shifting of the absorption edge from ultraviolet towards visible regions indicating carbonization while FTIR measurement shows the material degradation. The intensities of Raman band of ion irradiated polymer increases with the ion fluence. XRD results show decrease and shift in main peak of irradiated PET. Surface roughness is found to decrease with increasing ion fluence.  相似文献   
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The stability of fullerenes (C60 and C70) under swift heavy ion irradiation is investigated. C60 and C70 thin films were irradiated with 120 MeV Ag ions at fluences from 1×1012 to 3×1013 ions/cm2. The damage cross-section and radius of damaged cylindrical zone were found to be higher for C60 than C70 as evaluated by Raman spectroscopy, which shows that the C70 molecule is more stable under energetic ion impact. The higher damage cross-section of the C60 molecule compared with that of the C70 molecule is explained on the basis of thermal conductivity in the framework of the thermal spike model. The surface morphology of pristine C60 and C70 films is studied by atomic force microscopy. UV-visible absorption studies revealed that band gap for C60 and C70 fullerenes thin films decreases with increasing ion fluence. Resistivity of C60 and C70 thin films decreases with increasing ion fluence but the decrease is faster for C60 than C70, indicating higher damage in C60. Irradiation at a fluence of 3×1013 ions/cm2 results in complete damage of fullerenes (C60 and C70) into amorphous carbon.  相似文献   
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High-energy ion beam irradiation of the polymers is a good technique to modify the properties such as electrical conductivity, structural behaviour and mechanial properties. Polyaniline thin films doped with hydrochloric acid (HCl) were prepared by oxidation of ammonium persulphate. The effect of Swift Heavy Ions irradiation on the electrical and structural properties of polyaniline has been measured in this study. Polyaniline films were irradiated by oxygen ions (energy 80 MeV, charge state O+7) with fluence varying from 1 × 1010 to 3 × 1012 ions/cm2. The studies on electrical and structural properties of the irradiated polymers were investigated by measuring V-I using four probe set-up and X-ray diffraction (XRD) using Bruker AXS, X-ray powder diffractometer. V-I measurements shows an increase in the conductivity of the film, XRD pattern of the polymer shows that the crystallinity improved after the irradiation with Swift Heavy Ions (SHI), which could be attributed to cross linking mechanism.   相似文献   
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We report synthesis of a transparent magnetic semiconductor by incorporating Ni in zinc oxide (ZnO) matrix. ZnO and nickel-doped zinc oxide (ZnO:Ni) thin films (∼60 nm) are prepared by fast atom beam (FAB) sputtering. Both undoped and doped films show the presence of ZnO phase only. The Ni concentration (in at%) as determined by energy dispersive X-ray (EDX) technique is ∼12±2%. Magnetisation measurement using a SQUID magnetometer shows that the Ni-doped films are ferromagnetic, having coercivity (Hc) values 192, 310 and 100 Oe and saturation magnetization (Ms) values of 6.22, 5.32 and 4.73 emu/g at 5, 15 and 300 K, respectively. The Ni-doped film is transparent (>80%) across visible wavelength range. Resistivity of the ZnO:Ni film is ∼2.5×10−3 Ω cm, which is almost two orders of magnitude lower than the resistivity (∼4.5×10−1 Ω cm) of its undoped counterpart. Impurity d-band splitting is considered to be the cause of increase in conductivity. Interaction between free charges generated by doping and localized d spins of Ni is discussed as the reason for ferromagnetism in the ZnO:Ni film.  相似文献   
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1,1-Dialkylethenes are readily prepared in good yields from vinyltrialkylborates derived from trialkylboranes and trisylhydrazones of methyl ketones by treatment with iodine.  相似文献   
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