Surface Polaritons in GaAs/CdTe/PbTe Multilayer Structures

JETP Letters - Infrared spectra of reflection and attenuated total reflection of PbTe thin films deposited by molecular beam epitaxy on a GaAs/CdTe substrate have been measured. The high-frequency...     

Temperature Dependence of the Vibrational Mode of Pb1 –xSnxTe Films Grown by MBE on the GaAs/CdTe Hybrid Substrate

Bulletin of the Lebedev Physics Institute - Reflectance spectra of thin Pb1 –xSnxTe films (~60 nm) with x = 0.25, 0.53, and 0.59, grown by MBE on hybrid GaAs/CdTe substrates, are measured in...     

Photovoltaic characterization of n-CdTe/p-CdMnTe/GaAs diluted magnetic diode

A CdTe/CdMnTe heterojunction magnetic diode for photovoltaic applications was fabricated by using molecular beam epitaxy (MBE). The ideality factor and the potential barrier height of the diode were determined to be 1.25 and 0.836 eV, respectively. Photovoltaic parameters of the studied device were determined at various illumination intensities. The highest open circuit voltage of the CdTe/CdMnTe heterostructure was equal to 0.56 V at the illumination intensity of 130 mW/cm². The reverse current of the n-CdTe/p-CdMnTe/GaAs diode increases with the increasing illumination intensities. The obtained results suggest that n-CdTe/p-CdMnTe/GaAs diode can be used as a photodiode in photovoltaic and photodetector applications.