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This paper reports on the measurements of transport properties of high crystalline quality Sn doped In2O3 nanobelts. The samples presented metallic conduction in a large range of temperatures; however, at low temperatures, the resistivity showed a slight increase and the current–voltage curves showed a tendency to saturate even in the low-voltage range. From these observations, we discuss some arguments on the possibility of low dimensional conducting channels as the main responsible for the conduction at low temperatures. Additionally, we present an alternative technique for production of low resistance ohmic contacts, which can be further used in devices’ construction.  相似文献   
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We report on the effect of the Debye averaging process on the CV characteristics of a sample containing four coupled planes of InAs self-assembled quantum dots. The observed electron distribution presented a dynamical dependence of the temperature during the CV measurements which was explained in terms of the screening length dependence on the temperature. In addition, using the CV data, we calculated the electron density at the planes containing the InAs dots and we have observed a high-temperature stability: the electron density at the quantum dots remained constant over a large range of temperature.  相似文献   
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Fast atom bombardment, combined with high-energy collision-induced tandem mass spectrometry, has been used to investigate gas-phase metal-ion interactions with captopril, enalaprilat and lisinopril, all angiotensin-converting enzyme inhibitors.Suggestions for the location of metal-binding sites are presented. For captopril, metal binding occurs most likely at both the sulphur and the nitrogen atom. For enalaprilat and lisinopril, binding preferably occurs at the amine nitrogen. Copyright 1999 John Wiley & Sons, Ltd.  相似文献   
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Ferroelectric Pb1−xy Ca x Sr y TiO3 thin films (denoted by PCST90, PCST70, and PCST30) were deposited on the Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. Their properties were investigated from the viewpoint of crystal structure, microstructure, dielectric, and ferroelectric properties. X-ray diffraction patterns revealed the formation of PCST90, PCST70, and PCST30 thin films without any secondary phases. Infrared and Raman spectroscopy results show that a gradual phase transition from tetragonal to pseudocubic or cubic perovskite structure may occur in PCST thin films with the simultaneous increase of Ca2+ and Sr2+ contents. Both substitution of isovalent Ca2+ and Sr2+ at Pb2+-site enhanced the dielectric constant and reduced the remnant polarization. In addition, ferroelectric test analyses show that the PCST thin films undergo a ferroelectric-to-paraelectric phase transformation with an amount of Pb2+, Ca2+, and Sr2+ at 30%, 35%, and 35% mol, respectively. Hence, the absence of ferroelectric property may be attributed to a decreasing of the octahedron distortion in the perovskite structure accompanied by a weakening of long-range ferroelectric order.  相似文献   
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Strontium-modified lead titanate (PST) thin films with composition Pb1-xSrxTiO3 (0.10<x0.60) were grown on Pt/Ti/SiO2/Si substrates using a soft chemical process. The crystallization of the PST thin films was achieved by heat treatment at 600 °C. The structural and microstructural modifications in the films were studied using X-ray diffraction (XRD) and atomic force microscopy, respectively. The XRD study shows that the lattice parameters of polycrystalline PST thin films calculated from X-ray data indicate a decrease in lattice tetragonality with the increase in strontium content in these films. This indicates a gradual change from tetragonal to cubic structure. By atomic force microscopy analysis, the average grain size of the thin films was systematically reduced with the increase in Sr content. The dielectric property of the thin films was found to be strongly dependent on the Sr concentration. With 60 at.% Sr content, a ferroelectric to paraelectric phase transition was observed at room temperature. PACS 61.10.Nz; 68.37.Ps; 77.55.+f; 77.84.-s; 81.15.-z  相似文献   
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