Magnetic properties and magnetocaloric effects in amorphous and crystalline Gd55Co35Ni10 ribbons

The magnetic properties and magnetocaloric effects of amorphous and crystalline Gd55Co35Ni10 ribbons are investigated.A main phase with a Ho 12 Co 7-type monoclinic structure(space group P21/c) and a minor phase with a Ho4Co3-type hexagonal structure(space group P63/m) are obtained for crystalline ribbon after annealing.The amorphous ribbons order ferromagnetically and undergo a second-order transition at 192 K.For crystalline Gd55Co35Ni10 ribbons,two magnetic phase transitions occur at 158 and 214 K,respectively.The peak value of-△SM under a field change of 0-5 T is 6.5 J/kg K at 192 K for amorphous Gd55Co35Ni10 ribbons.A relatively large magnetic entropy change(～5.0 J/kg K) under a field change of 0-5 T for the crystalline Gd55Co35Ni10 ribbons is obtained in the temperature interval range of 154-214 K.The large platform of magnetic entropy change and the negligible thermal/magnetic hysteresis loss mean the crystalline Gd55Co35Ni10 compound can satisfy the requirement of the Ericsson-type refrigerator working in the temperature range from 154K to 214K.     

Collective Dand Structures in Doubly Odd 136La Nucleus

Using heavy-ion nuclear reaction and in-beam γ-ray spectroscopy technique,high spin states of ¹³⁶La have been studied. The nuclear reaction used is ¹³⁰Te(¹¹B,5n) with a beam energy 60MeV. The level scheme with three collective band structures has been updated with spin up to 20h. The collective backbending has been observed in $\uppi h_{11/2}\otimes \upnu h_{11/2}$ band. According to the TRS calculations,this backbending is due to the alignment of a pair of h_11/2 neutrons. The signature splitting and inversion for the $\uppi h_{11/2}\otimes \upnu h_{11/2}$ band were also discussed. Other two bands based on $12^-$ and $16^+$ levels were proposed as oblate deformation with $\gamma\approx -60^\circ$. They most probably originate from four- and six- quasiparticle configurations, that is,$\uppi h_{11/2}\otimes\upnu g_{7/2} h_{11/2}^2$ and $\uppi g_{7/2}\otimes\upnu g_{7/2}^2 d_{5/2}h_{11/2}^2$ respectively.     

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.     

煤气化中NO_x及其前驱物释放规律研究

采用U型管反应系统,研究了氧浓度、气流速率和气化温度对神木煤气化过程中NO_x及其前驱物的释放规律.研究发现:气化时生成的HCN和NH_3总量比热解时大幅下降,表明O_2的引入抑制了H自由基的可获得性.随着氧浓度的增加,NO的收率先减后增,而NO_2收率几乎没有变化.氧浓度较低时,生成的高浓度CO阻止了挥发分氮向NO的转化.气流速率对含氮气相产物释放影响各不相同.低温气化产物以NO_2和HCN为主,NO_2主要来自进样期挥发分的缓慢氧化,而高温气化产物中的NH_3的生成主要来源于焦炭氮.     

离轴抽运对Nd:YAG激光器振荡模式影响的研究

以激光二极管端面抽运固体激光器为研究对象,通过实验研究了离轴抽运条件下,离轴量的大小对Nd:YAG激光器的振荡光阈值、振荡模式、光束质量以及激光器的斜效率的影响,分析了在同一抽运位置改变LD电流时输出光位置及模式的变化情况.实验结果表明,当抽运光离轴量增大时,斜效率增大,但输出光依次出现从低阶模到高阶模的变化,激光器的振荡阈值升高,光束质量变差;在同一抽运位置增大LD电流时,输出光从高阶模向低阶模转化,光斑中心向此时的抽运中心轴靠拢.     

12C6+离子对阿维链霉菌累进辐照诱变效应研究

选用12C6+ 离子束对阿维链霉菌诱变选育高产菌株与原始菌株进行辐照诱变, 研究其累进辐照效应。实验结果表明,在辐照剂量为10 Gy时, 原始菌株比诱变高产菌株存活率高, 抗辐射能力强;辐照剂量高于30 Gy时,诱变高产菌株比原始菌株存活率高, 抗辐射能力强。原始菌株正突变率最高的辐照剂量为50 Gy, 致死率99.43%,正突变率最高, 达34.2%;对诱变高产菌株辐照剂量为30 Gy,致死率94.97%,正突变率最高, 达23.5% 。累进辐照效应降低了最佳辐照剂量。 Mutagenic effect on the mutant high producing strain ZJAV Y1 203 and the original strain ZJAV A1 irradiated by ion beam of 12C6+ have been investigated. The experimental results indicated that the original strain has higher survival rate and stronger resistance to radiation than mutant high producing Strain at dose of 10 Gy. The mutant high producing strain has higher survival rate and stronger resistance to radiation than the original strain at the dose higher than 30 Gy. The lethality was 97% and the highest rate of orthomutation was 34.2%, when ZJAV A1 was irradiated by 50 Gy 12C6+ beam. The lethality was 94.97% and the highest rate of orthomutation was 23.5% when ZJAV Y1 203 was irradiated by 30 Gy 12C6+ beam. The best radiation dose is decreased by progressivity irradiation.     

微量低电离电位的添加物对XeCl准分子激光输出的影响

本文报道在XeCl准分子激光器中添加微量的氯苯(C_6H_5Cl)或四氯化碳(CCl_4),使激光输出能量提高约16％。     

碱金属碘酸盐赝二元系固溶体的研究

碱金属碘酸盐形成的二十一个赝二元系中,六个体系为机械混合物,九个体系是形成化合物的(其中三个是离子化合物),其余六个体系形成连续固溶体。本文对KIO₃-NH₄IO₃,RbIO₃-NH₄IO₄等赝二元系形成的连续固溶体进行了研究。NH₄IO₃中加入KIO₃或RbIO₃时,随加入量增加,NH< 关键词：     

Li2K(IO3)3与Li2NH4(IO3)3的晶体结构

本文用X射线粉末法测定了Li₂K(IO₃)₃与Li₂NH₄(IO₃)₃的晶体结构和原子参数。发现Li₃K(IO₃)₃,Li₂NH₄(IO₃)₃与Li₂Rb(IO₃)₃同晶型,属单斜晶系,空间群为P2₁/α,每个单胞含有四个化合式量。室温的点阵常数分别为α=11.198?,b=11.046?,c=8.254?,β=111.53°,及α=11.327?,b=11.078?,c=8.341?,β=111.87°。讨论了二元化合物的形成与离子半径的关系。 关键词：     

非晶态离子导体Li2B2O4晶化前期的离子导电性

本文研究了非晶态离子导体Li₂B₂O₄的离子电导率与温度的关系,特别着重于晶化前期的离子迁移特性。当温度低于T_K(≈310℃)时,离子电导率遵从Arrhenius关系。当高于晶化温度(≈411℃)时,以晶态中的离子迁移为主。在T_kc时,电导率偏离热激活机制呈反常增高。我们把这一过程称为晶化前期过程。可以用自由体积模型进行描述。晶化前期又可分为两部分:当温度低于、T_p(≈380℃)时,由于自由体积的重新分布,导致了电导率的增高;当T>T_p时,出现了少量微晶,但晶化量小于5%,由于非晶母体与微晶之间的界面效应使得离子导电性显著增强。可以通过室温淬火,把晶化前期非晶态的状态保持到室温,从而有可能制备出离子电导率高于纯非晶态的材料。 关键词：