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1.
V. T. Bublik S. Yu. Matsnev K. D. Shcherbachev M. V. Mezhennyi M. G. Mil’vidskii V. Ya. Reznik 《Physics of the Solid State》2003,45(10):1918-1925
Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treated dislocation-free large-diameter silicon wafers with vacancies. The DXS method is shown to be efficient for investigating MDs in silicon single crystals. Specific defects, such as impurity clouds, are found to form in the silicon wafers during low-temperature annealing at 450°C. These defects are oxygen-rich regions in the solid solution with diffuse coherent interfaces. In the following stages of decomposition of the supersaturated solid solution, oxide precipitates form inside these regions and the impurity clouds disappear. As a result of the decomposition of the supersaturated solid solution of oxygen, interstitial MDs form in the silicon wafers during multistep heat treatment. These MDs lie in the {110} planes and have nonspherical displacement fields. The volume density and size of MDs forming in the silicon wafers at various stages of the decomposition are determined. 相似文献
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Homogeneity region and the concentration of dominant native point defects along its boundary are calculated by the method of quasichemical reactions with the use of experimental data on the structure type of solid solutions formed by the components in GaAs. The entropy and enthalpy of the formation of dominant native point defects in GaAs are obtained. Temperature ranges of the formation of microdefects-finely dispersed Ga and As precipitates are considered. 相似文献
5.
M. A. Borik V. T. Bublik M. A. Vishnyakova E. E. Lomonova V. A. Myzina N. Yu. Tabachkova A. A. Timofeev 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2011,5(1):166-171
Zirconia single crystals doped with 2.8, 3.2, 3.7, and 4.0 mol % of Y2O3 have been studied. The phase composition and structure have been studied by X-ray diffraction analysis and transmission electron
microscopy. It has been established that all investigated samples has two ZrO2 tetragonal phases with tetragonality c/a = 1.006–1.007 and c/a = 1.014–1.015 independent of the stabilizing impurity content. The former phase is not transformed, whereas the latter is
transformed into a monoclinic one. In all cases the samples have a developed twin structure. Twinning hierarchy is observed:
there are first-, second-, third-order, etc., twins, each of them containing the next-order twins inside them. Elastic stress
relaxation occurs by twinning rather than by generation of dislocations. The stabilizing impurity content affects the structure
nonmonotonically; the minimum dimensions of the twin lamellas refer to the Y2O3 concentration of 3.2 mol %. 相似文献
6.
A new approach is suggested for solving the inverse problem in underwater acoustics — the determination of the velocity of signal propagation in an inhomogeneous medium. The unknown velocity u(x(t), t) is assumed to be independent of the time t and is sought in the form of a polynomial with respect to the degree of the space coordinate x
1, x2, x3.Translated fromVychislitel'naya i Prikladnaya Matematika, No. 69, pp. 102–105, 1989. 相似文献
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A. Y. Polyakov N. B. Smirnov A. V. Govorkov V. T. Bublik A. E. Botchkarev James A. Griffin 《哲学杂志》2013,93(21):2531-2544
Defects and localized states have been studied for molecular-beam-epitaxy (MBE)-grown high-resistivity and undoped GaAs1?x N x films with a N concentration not exceeding approximately 1.0 at.%. The crystalline quality of the films and hence the defects and localized states were determined by high-resolution X-ray diffraction, photoluminescence spectra, capacitance versus voltage measurements and photoinduced current transient spectra of GaAs and GaAs1?x N x layers. It was concluded that incorporation of low concentrations of N into MBE-grown GaAs1?x N x films promotes the formation of high densities of deep centres similar to EL2 donors, leading to heavy compensation of the films by some unidentified acceptors. GaAs antisite acceptors were believed to be responsible for the said compensation. A prominent defect band near 1.33-1.38 eV also appeared to be associated with these defects. The most prominent centres in dilute GaAs1?x N x films with N content less than 0.35 at.% seem to be the EL2 donors and the hole traps located near E v +0.3 eV. 相似文献
9.
A numerical and analytical model is proposed for the impact of a hollow melt droplet onto the surface of a solid polished
substrate. The model is based on integral laws of the mass and energy conservation of the colliding droplet, it accounts for
capillary and adhesion properties of the melt. The main parameters of the high-velocity deformation of a hollow particle have
been computed: the variation of its height, shell thickness, and the contact spot diameter up to the moment of the spreading
droplet solidification as well as the pressure variation inside the droplet until the moment of the shell rupture. The critical
pressure value at which the rupture occurs is estimated by a formula characterizing the spherical shell strength. Quite a
fair agreement of the computed values of the final diameter of the splat of a spread and solidified droplet with the data
of physical experiment is shown.
The work was financially supported by the Russian Foundation for Basic Research (Grant No. 06-01-00080) as well as within
the framework of the Interdisciplinary Integration Project of SB RAS No. 90 for the years 2006–2008 “Scientific Fundamentals
of the Creation of Multi-Layer Nano-Structural Coatings and Interfaces in Heterogeneous Materials for Operation in the Fields
of Extreme External Effects”. 相似文献
10.
I. F. Makarevich M. V. Mokrouz L. Ya. Topchii I. P. Kovalev V. E. Sokolova Yu. I. Gubin N. P. Bublik V. A. Polyakov 《Chemistry of Natural Compounds》1984,19(5):572-576
The influence of the oximation of cardenolides and the production of 10-cyanocardenolides on their biological activity has been studied. The prefered conformation of strophanthidin 19-aldoxime has been established; it has chelate fragment as the result of the orientation in the same direction of the nitrogen atom of the oxime group and the hydroxy groups at C-3 and C-5.All-Union Scientific-Research Institute of the Chemistry and Technology of Drugs, Khar'kov. Translated from Khimiya Prirodnykh Soedinenii, No. 5, pp. 608–612, September–October, 1983. 相似文献