New method of determining the young’s Modulus of (Ga,Mn)As nanowhiskers with a scanning electron microscope

Arrays of (Ga,Mn)As nanowhiskers have been grown by molecular-beam epitaxy. The scanning electron microscopy study of the surface morphology of the samples has revealed the appearance of mechanical vibrations of individual nanowhiskers. To describe the vibrations, a model has been developed for the determination of the Young’s modulus of (Ga,Mn)As nanowhiskers.     

Computer simulation of the structure and raman spectra of GaAs polytypes

The structure, energy of formation, and Raman spectra of several polytypes (3C, 2H, 4H, and 8H) of gallium arsenide GaAs have been investigated using quantum mechanical calculations based on the local density functional theory. It has been found that the energy of the formation of hexagonal polytypes increases with an increase in the length of the periodicity and approaches the value corresponding to the ground state, i.e., to the structure of the 3C polytype. It has been shown that the calculated frequencies of normal vibrations of different polytypes are consistent, with good accuracy (±6 cm^?1), with the scheme of folding of the phonon branches. In the calculated Raman spectra of the polytypes, there are new lines (forbidden in the spectrum of the 3C polytype) which can serve as characteristic lines of other polytypes. Similar lines can be found in the Raman spectra of GaAs nanowhiskers. This result has opened up new prospects for the application of Raman spectroscopy to the characterization of the structure of these nano-objects.     

Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au‐assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation‐free III–V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 °C to 340 °C for InAs NWs on Si(111), 330 °C to 360 °C for InP NWs on Si(111), 370 °C to 420 °C for InAs NWs on GaAs(111)B and 380 °C to 540 °C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings and are discussed within the frame of a theoretical model. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Development of the Design of Super-Multiperiod Structures Grown by Molecular-Beam Epitaxy and Emitting in the Terahertz Range

Journal of Experimental and Theoretical Physics - A design of terahertz (THz) radiation source has been developed based on an AlGaAs/GaAs superlattice grown by molecular-beam epitaxy. The gain and...     

Raman spectra and structural peculiarities of GaAs nanowires

The Raman scattering spectra of nanowire samples in the region of fundamental modes (50–320 cm^?1) are studied to analyze the structural peculiarities of GaAs nanowires (nanowhiskers) grown on a Si (111) substrate. Factor analysis of the experimental data array consisting of 55 spectra, each of which contains 300 points, is carried out. It is found that the number of linearly independent contributions in these data arrays amounts to only two spectra. The form of each linearly independent contribution is close to zincblende (ZB) and wurtzite (WZ) spectra. It is established that ZB and WZ phases exist in nanowhiskers. Comparison with the calculated frequencies of the normal vibrations of hexagonal GaAs polytypes makes it possible to assume that the spectra of crystal nanowhiskers are combinations of ZB and WZ spectra with good accuracy and agree with the scheme of phonon branch folding of the ZB Brillouin zone.     

Specific features of Raman spectra of III–V nanowhiskers

Raman spectra of GaAs nanowhiskers that are grown on different substrates and differ from one another by the content of the sphalerite and wurtzite phases have been investigated. Special attention has been focused on the manifestation of structural features in the scattering spectra of nanowhiskers. It has been established that the nanowhiskers are characterized both by random inclusions of wurtzite layers in the sphalerite structure and by the continuous growth in the wurtzite phase. The interpretation of the scattering spectrum agrees with the concept of summation of the dispersion curves of the sphalerite structure upon transition to the wurtzite structure, which leads to a transformation of zone-boundary modes at the L point of the Brillouin zone into zone-center modes of the wurtzite structure and, as a consequence, to the appearance of a number of new fundamental modes of different symmetries. An analysis of the Raman spectra has revealed the formation of the hexagonal 4H polytype in narrow layers of nanowhiskers due to a random packing of hexagonal layers. The coexistence of the sphalerite and wurtzite phases in GaAs nanowhiskers completely correlates with the photoluminescence spectra measured for the same samples.     

Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure

Self‐standing III–V nanowires (NWs) are promising building blocks for future optoelectronic devices such as LEDs, lasers, photodetectors and solar cells. In this work, we present the results of low temperature photoluminescence (PL) characterization of GaAs NWs grown by Au‐assisted molecular beam epitaxy (MBE), coupled with the transmission electron microscopy (TEM) structural analysis. PL spectra contain exci‐ ton peaks from zincblende (ZB) and wurtzite (WZ) crystal structures of GaAs. The peaks are influenced by the quantum confinement effects. PL bands corresponding to the exciton emission from ZB and WZ crystal phases are identified, relating to the PL peaks at 1.519 eV and 1.478 eV, respectively. The obtained red shift of 41 meV for WZ GaAs should persist in thin NWs as well as in bulk materials. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and properties of self‐catalyzed (In,Mn)As nanowires

Mn‐assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side‐walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Influence of substrate temperature on the shape of GaAs nanowires grown by Au-assisted MOVPE

GaAs nanowires (NWs) are grown on the GaAs(1 1 1)B substrates by the Au-assisted metal–organic vapor phase epitaxy (MOVPE). The NW shape is found to be strongly dependent on the substrate temperature during the growth. With increase in the growth temperature, the NW shape modifies from prismatic to conical. The observed temperature behavior is studied within the frame of a theoretical model. It is shown that the key process responsible for the lateral growth is the decomposition of MOVPE precursors at the NW sidewalls and the substrate. Theoretical results are in a good agreement with experimental findings and can be used for the numerical estimates of some important growth parameters as well as for the controlled fabrication of NWs with the desired shape.