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Surasing Chaiyakun Artorn Pokaipisit Pichet Limsuwan Boonlaer Ngotawornchai 《Applied Physics A: Materials Science & Processing》2009,95(2):579-587
Titanium dioxide thin films were deposited on three different unheated substrates by unbalanced magnetron sputtering. The
effects of the sputtering current and deposition time on the crystallization of TiO2 thin films were studied. The TiO2 thin films were deposited at three sputtering current values of 0.50, 0.75, and 1.00 A with different deposition times of 25,
35, and 45 min, respectively. The surface morphology of the films was investigated by atomic force microscopy (AFM). The structure
was characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The film thickness was determined
by field emission scanning electron microscopy (FE-SEM), and the optical property was evaluated with spectroscopic ellipsometry.
The results show that polycrystalline anatase films were obtained at a low sputtering current value. The crystallinity of
the anatase phase increases as the sputtering current increases. Furthermore, nanostructured anatase phase TiO2 thin films were obtained for all deposition conditions. The grain size of TiO2 thin films was in the range 10–30 nm. In addition, the grain size increases as the sputtering current and deposition time
increase. 相似文献
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