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Yu. V. Esipov V. M. Mukhortov S. V. Biryukov A. A. Mamatov S. I. Masychev 《Technical Physics》2016,61(8):1220-1224
The results of measuring the capacitances of planar capacitors are used to calculate the dielectric constants of barium–strontium titanate nanofilms. An expression is derived to calculate an adjustable coefficient to obtain adequate dielectric constants for 20-nm-thick ferroelectric films. The field of applicability of the adjustable coefficient is determined. 相似文献
3.
D. V. Stryukov V. M. Mukhortov Yu. I. Golovko S. V. Biryukov 《Physics of the Solid State》2018,60(1):115-119
The structural properties of one- and two-layer heterostructures based on the barium–strontium titanate of various compositions deposited by the Frank–Van der Merve on a magnesium oxide substrate have been studied. The heterostructures have been prepared by the rf sputtering of the stoichiometric ceramic targets in a Plazma 50 SE deposition system. The principal difference of this method of deposition from known analogs is that the growth of single-crystal films occurs from a disperse oxide phase formed in the plasma of a high-current rf discharge during the ceramic target sputtering at the cluster level. The peculiarities of the manifestation of the ferroelectric state in the two-layer heterostructures when changing the sequence order of the films with various compositions of barium–strontium titanate. 相似文献
4.
S. N. Biryukov 《Journal of Mathematical Sciences》2009,157(3):450-455
The author constructs a universal invariant for symmetric braids, knots, and linkages.
Translated from Sovremennaya Matematika i Ee Prilozheniya (Contemporary Mathematics and Its Applications), Vol. 53, Suzdal
Conference-2006, Part 1, 2008. 相似文献
5.
A. A. Biryukov S. M. Nekorkin M. N. Kolesnikov T. S. Babushkina V. Ya. Aleshkin A. A. Dubinov 《Technical Physics》2011,56(7):1049-1052
Semiconductor lasers with an active region containing six quantum wells are investigated experimentally. The temperature dependences
of working characteristics (threshold current density, external differential quantum efficiency, and directional pattern)
are analyzed. Anomalous behavior of the temperature dependence of the threshold current and external differential quantum
efficiency, associated with a negative characteristic temperature and a decrease in the quantum efficiency of radiation upon
a decrease in temperature, is detected. A narrowing of the directional patterns in the plane perpendicular to the p-n junction upon an increase in temperature is revealed. 相似文献
6.
Formation and electron-beam annealing of implantation defects in a thin-film Si-SiO2 heterostructure
Zatsepin A. F. Kaschieva S. Biryukov D. Yu. Dmitriev S. N. Buntov E. A. 《Technical Physics》2009,54(2):323-326
Technical Physics - The radiation-induced defects in a 20-nm-thick SiO2 film on a silicon wafer are studied by optically stimulated electron emission. Accelerated (12-keV) silicon ions is found to... 相似文献
7.
A. F. Zatsepin D. Yu. Biryukov V. S. Kortov S. O. Cholakh 《Physics of the Solid State》2002,44(9):1671-1675
The processes involved in the excited-state relaxation of hole O 1 0 centers at nonbridging oxygen atoms in glassy SiO2 were studied using luminescence, optical absorption, and photoelectron emission spectroscopy. An additional nonradiative relaxation channel, in addition to the intracenter quenching of the 1.9-eV luminescence band, was established to become operative at temperatures above 370 K. This effect manifests itself in experiments as a negative deviation of the temperature-dependent luminescence intensity from the well-known Mott law and is identified as thermally activated external quenching with an energy barrier of 0.46 eV. Nonradiative transitions initiate, within the external quenching temperature interval, the migration of excitation energy, followed by the creation of free electrons. In the final stages, this relaxation process becomes manifest in the form of spectral sensitization of electron photoemission, which is excited in the hole O 1 0 -center absorption band. 相似文献
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