Clean reconstructed InAs(1 1 1) A and B surfaces using chemical treatments and annealing

Well-ordered clean InAs(1 1 1) A and B surfaces have been prepared using HCl-isopropanol solutions and characterized using low-energy electron diffraction and photoemission spectroscopy. The as-treated surfaces are covered by a layer containing arsenic and small amounts of InCl_x. Annealing induces desorption of the overlayer and reveals (2 × 2) and (1 × 1) structures on the A and B surfaces, respectively. For both surfaces, the surface components of the In 4d and As 3d reveal a charge transfer from the electropositive surface indium to the electronegative surface arsenic. The major advantage of this preparation method over conventional thermal cleaning is a significant reduction in the annealing temperature (≈250 °C) thereby avoiding anion evaporation.     

Equivalence of two-loop superstring amplitudes in the pure spinor and Ramond-Neveu-Schwarz formalisms

The pure spinor formalism for the superstring has recently been used to compute massless four-point two-loop amplitudes in a manifestly super-Poincaré covariant manner. In this Letter, we show that when all four external states are Neveu-Schwarz states, the two-loop amplitude coincides with the Ramond-Neveu-Schwarz result.     

Structural properties of GaAs surfaces nitrided in hydrazine-sulfide solutions

The surface structure of GaAs(1 0 0), (1 1 1)A, and (1 1 1)B substrates nitrided through the wet chemical treatment in hydrazine-sulfide solution have been studied by scanning tunneling microscopy (STM) under annealing in UHV. Such treatment has earlier been shown to produce a monolayer of gallium nitride on the (1 0 0)GaAs surface. The as-nitrided substrates of all surface orientations were found to be covered by an overfilm, which contains thioarsenic compounds and has a smooth relief. Thermal desorption of the overlfilm at about 530 °C opens the own relief of the nitrided surfaces. For the (1 0 0) orientation such relief is not microscopically planar and consists of nano-scale vicinal hillocks. These hillocks occur due to surface microetching which proceeds simultaneously with the formation of the surface nitride layer. We have shown that the wet nitridation procedure forms a monolayer of surface nitride on the (1 1 1)B surface. During nitridation the (1 1 1)B surface, as well as the (1 0 0) one, is affected by the microetching in the hydrazine-sulfide solution. Therefore, it exhibits a characteristic relief formed by triangular vicinal pyramids. At the same time the nitride film is not formed on the (1 1 1)A surface, which is more chemically inert, and where the surface etching is almost absent.     

Reactions along the astrophysical s-process path and prospects for neutron radiotherapy with the Liquid-Lithium Target (LiLiT) at the Soreq Applied Research Accelerator Facility (SARAF)

The European Physical Journal A - An empirical formula is proposed for the two-proton decay half-lives. This study is an extension of the empirical formula reported recently by us for calculating...     

Reflectance anisotropy spectroscopy of metal nanoclusters formed on semiconductor surface

Optical anisotropy of indium nanoclusters formed on the (001) surface of indium arsenide was found by differential reflectance anisotropy spectroscopy. The fact of such an observation for nanocluster arrays unambiguously evidences the presence of their macroscopic anisotropy which could not be disclosed by conventional diagnostics techniques. The scale of the observed plasmonic anisotropy signal exceeds by two orders of magnitude the scale of anisotropy signals from valence-bond structures formed on a semiconductor surface. A resonant feature observed in reflectance anisotropy spectra is interpreted in the model of coupled dipole plasmons belonging to ellipsoidal nanoparticles. Estimation based on the experimental spectra shows that within the sample surface the lengths of ellipsoid semiaxes differ from each other by a few percent.     

Ambrosetti-Prodi type multiplicity result for a wave equation with sublinear nonlinearity

We shall prove a weakened Ambrosetti-Prodi type multiplicity result for a wave equation with sublinear nonlinearity and without damping. Due to infinite-dimensional kernel of the wave operator, the Leray-Schauder and coincidence degrees are not available. We use an extension of the Leray-Schauder degree to obtain multiple solutions.