Crystallization of β-SiC in thin SiC x layers (x = 0.03−1.40) synthesized by multiple implantation of carbon ions into silicon

The composition and structure of homogeneous SiC_1.4, SiC_0.95, SiC_0.7, SiC_0.4, SiC_0.12, and SiC_0.03 layers obtained by multiple high-dose implantation of carbon ions with energies of 40, 20, 10, 5, and 3 keV into silicon are analyzed using Auger electron spectroscopy, X-ray diffraction, IR spectroscopy, and atomic force microscopy. The effect of decomposition of carbon and carbon-silicon clusters on the formation of Si-C tetrahedral bonds and on crystallization in silicon layers with high and low concentrations of carbon is considered.     

Synthesis of TiN,Ti, and TiSi2 Thin Films for the Contact System of Solar Cells

Physics of the Solid State - The influence of deposition parameters, such as: the magnetron power in the range 690–1400 W, the silicon substrate temperature 23–170°C, the N2 gas...     

Structural studies of thin silicon layers repeatedly implanted by carbon ions

The composition and structure of homogeneous SiC_1.4 and SiC_0.12 layers produced by multiple implantation of 40-, 20-, 10-, 5-, and 3-keV carbon ions into silicon were studied by electron microscopy, x-ray diffraction, Auger spectroscopy, and IR spectroscopy. The temperature dependences of the IR transmittance peak parameters obtained in the range 200–1400°C indicate that the increase in the number of carbon atoms that are bound to silicon atoms and are involved in absorption is caused by the formation and breaking of hexagonal, near-tetrahedral, and multiple Si-C bonds and by the decomposition of optically active strong carbon clusters. The high crystallization temperature of SiC (1200°C) in the SiC_1.4 layer is explained by the presence of stable multiple Si-C bonds and strong carbon clusters. Strong carbon clusters are shown to exist in the implanted SiC_0.12 layer, and their decomposition is found to affect the formation of tetrahedral bonds in the temperature range 1200–1400°C.     

Influence of treatment in the (O2,H2) plasma on the structure and physical properties of SnO x films

The influence of treatment in hydrogen and oxygen glow discharge plasmas on the structural and optical properties of 270- to 350-nm-thick SnO _x films prepared using magnetron sputtering and the sol-gel method on the glass substrate has been considered. It has been demonstrated that the plasmas exert segregating and destroying effects on the structure of crystal grains, the transparency of films, and on their porosity. It has been established that treatment in the hydrogen glow discharge plasma makes it possible in principle to prepare crystal-amorphous nanostructures in which tin oxide nanocrystals of high quality alternate with tin oxide clusters.     

X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method

Physics of the Solid State - The structure and composition of SiC nanolayers are comprehensively studied by X-ray reflectometry, IR-spectroscopy, and atomic-force microscopy (AFM) methods for the...     

Low-Temperature Synthesis of α-SiC Nanocrystals

Physics of the Solid State - Thick SiCx films have been deposited on a c-Si surface by radiofrequency (rf) magnetron sputtering (150 W, 13.56 MHz, Ar flow 2.4 L/h, 0.4 Pa) of graphite and silicon...     

Study of structural, optical and electrical properties of ZnO and SnO2 thin films

The investigation of structure, optical and electrical properties of tin and zinc oxide films on glass substrates by using magnetron sputtering are carried out. X-ray data show the formation of textured tin oxides film during deposition and its transformation to SnO₂ polycrystalline film at low temperature (200 C) if the concentration of oxygen in the chamber is high (O₂ — 100%, Ar — 0%). Optimal conditions of SnO₂ polycrystalline film deposition (pressure of Ar–O₂ mixture in chamber — 2.7 Pa, concentration of O₂ — 10%) are determined. Low resistivity of as-deposited ZnO film and increasing ZnO crystallite sizes and phase volume at temperatures higher than the melting point of Zn (419.5 C) are explained by formation of conductive Zn and ZnO particle chains and their destruction, respectively.     

Structure and composition of silicon carbide films synthesized by ion implantation

The mathematical decomposition of the IR absorption spectrum obtained from a Si layer after the C⁺ ion implantation with an energy of 10 or 40 keV or from a homogeneous SiC_0.7 film has demonstrated that fractions of weak elongated Si-C bonds in the amorphous phase, strong shortened Si-C bonds on the surface of small nanocrystals, and tetrahedral Si-C bonds in the crystalline phase (degree of crystallinity) after high-temperature annealing (1250–1400°C) of the layers are equal to 29/29/42, 22/7/71, and 21/31/48%, respectively. A system of SiC_2.0, SiO₂, SiC_0.8, and SiC_0.6 layers in the film on the Si substrate has been identified using X-ray reflectometry and the simulation with the Release software. The reflectometry data on fluctuations of the intensity of X-ray reflections in the region of the main maximum have been interpreted in terms of variations in the density over the depth of the layer with a Gaussian distribution of carbon atoms from 2.55 and 2.90 g/cm³ for the SiC_0.25 and SiC_0.65 layers, respectively, to 3.29 g/cm³ for the SiC_1.36 layer.