苯酚和草酸二甲酯在不同分子筛催化下的酯交换反应

研究了以TS－1、H－ZSM－5、Hβ和H－丝光沸石等不同分子筛为催化剂，苯酚和草酸二甲酯酯交换合成草酸二苯酯反应。通过对催化剂进行吸附吡啶的红外光谱和NH3－TPD表征，考察了不同分子筛催化剂的酸性和酸强度对草酸二苯酯合成反应的影响，确定了催化剂上的弱酸中心是催化苯酚和草酸二甲酯酯交换合成草酸二苯酯反应的活性位，且催化剂的酸性中心越多，酸量越大，催化活性越好。催化剂上的强酸中心促进了副产物苯甲醚的生成。     

对称电场催化增强甲烷转化合成C_2研究(英文)

利用电场作用通过交流和直流等离子体在低温、常压和低功率下催化反应将甲烷直接转化为碳二烃（乙烷、乙烯、乙炔）。考察了在对称电场作用下催化剂的催化性能。实验结果表明,在交流电场作用下,碳二烃选择性差别不大;甲烷转化率的大小顺序为： ＭｎＯ_２／Ａｌ２Ｏ３＞Ｎｉ／Ａｌ２Ｏ３＞ＭｏＯ_３／Ａｌ２Ｏ３＞Ａｌ２Ｏ３＞Ｎｉ／Ａｌ２Ｏ３＞ＭｏＯ_３／Ａｌ２Ｏ３＞Ｎｉ／ＮａＹ＞Ｐｄ／ＺＳＭ－５＞Ｎｉ／Ｈ４Ｍｇ２Ｓｉ３Ｏ４＞Ｎｉ／ＺＳＭ－５＞Ｃｏ／ＺＳＭ－５＞无催化剂：在直流电场作用下,碳二烃选择性差别也不大（除Ｎｉ／ＮａＹ外）,甲烷转化率的大小顺序为： Ｎｉ／Ａ１２Ｏ３＞Ｎｉ／Ｈ４Ｍｇ２Ｓｉ３Ｏ４＞Ｎｉ／ＺＳＭ－５＞Ｃｏ／ＺＳＭ－５＞ＭｎＯ２／Ａ１２Ｏ３＞ＭｏＯ３／Ａ１２Ｏ３＞Ｎｉ／ＮａＹ＞无催化剂＞Ｐｄ／ＺＳＭ－５。     

Simulated Sunlight-Driven Degradation of Rhodamine B by Porous Peanut-Like TiO2/BiVO4 Composite

Porous peanut-like TiO₂/BiVO₄ composite nanostructures were synthesized via a template-free hydrothermal process with bismuth nitrate, ammonium metavanadate and anatase TiO₂ as raw materials. The crystal structures, morphologies, and optical properties of the as-prepared samples were characterized by X-ray powder diffraction, transmission electron microscope, scanning electron microscopy, X-ray photoelectron spectroscopy and UV–visible absorption spectra. Simulated sun-light induced photocatalytic degradation of Rhodamine B by porous peanut-like TiO₂/BiVO₄ nanostructures in the absence and presence of H₂O₂ has been investigated, and the results show these porous composite nanostructures with higher photocatalytic activity than pure BiVO₄ and anatase TiO₂. When TiO₂/BiVO₄ heterostructures were used as the photocatalysts under simulated sun-light irradiation, BiVO₄ could act as a sensitizer to absorb the visible light. Meanwhile, coupling different band-gap semiconductors of TiO₂ and BiVO₄, the compound facilitate separation of the photogenerated carriers under the internal field induced by the different electronic band structures of semiconductors.     

Synthesis of Diethyl Oxalate by a Coupling-Regeneration Reaction of Carbon Monoxide

This article describes a process for the synthesis of diethyl oxalate by a coupling reaction of carbon monoxide, catalyzed by palladium in the presence of ethyl nitrite. The kinetics and mechanism of the coupling and regeneration reaction are also discussed. This paper presents the results of a scale-up test of the catalyst and the process based on an a priori computer simulation.     

砷的代谢机制、毒性和生物监测

砷化合物是备受关注的一类污染物,特别是饮用水中的砷污染引发了全球性的健康问题.本文综述了近年来人们对砷的代谢机制、毒性和生物监测的研究进展.砷在生物体内的代谢过程十分复杂,在氧化还原酶和甲基转移酶的参与下,产生一系列的代谢产物和中间产物.其中,砷的原始摄入形态、代谢产物及中间产物由于不同的物理化学性质,体现了不同的毒性.人类和不同的动物由于不同的砷代谢机理和甲基化能力,也表现了对砷毒性抵抗能力的差异.在生物体内,一些砷化合物与生物蛋白相互作用,影响它们的存在形式、分布和传输,是砷的生物代谢和毒理研究中不可或缺的内容.生物监测是一种直接有效的污染物健康风险评估方法.在尿液、血液、唾液、头发和指甲中砷化合物直接反映了暴露主体的砷暴露程度,这5种生物介质作为砷暴露的生物标志物各有优缺点.在砷的研究中,代谢机制和毒性的研究可以帮助选择合适的生物监测方法,做出合理准确的健康风险评估.生物监测也可促进对砷的代谢机制和毒性的理解,推断可能的代谢途径,定量毒性剂量效应,两者相互依赖相互促进.     

Charge density fluctuation of low frequency in a dusty plasma

The charge density fluctuation of low frequency in a dusty plasma, which is derived from the longitudinal dielectric permittivity of the dusty plasma, has been studied by kinetic theory. The results show that theP value, which describes the relative charge density on the dust in the plasma, and the charging frequency of a dust particle Ω _c , which describes the ratio of charge changing of the dust particles, determine the character of the charge density fluctuation of low frequency. For a dusty plasma ofP≪1, when the charging frequency Ω _c , is much smaller than the dusty plasma frequency ω_d, there is a strong charge density fluctuation which is of character of dust acoustic eigenwave. For a dusty plasma ofP≫1, when the frequency Ω _c , is much larger than ω _d there are weaker fluctuations with a wide spectrum. The results have been applied to the ionosphere and the range of radius and density of dust particles is found, where a strong charge density fluctuation of low frequency should exist.     

Long-time dynamics for a nonlinear Timoshenko system with delay

This paper is concerned with a nonlinear Timoshenko system with a time delay term in the internal feedback together with initial data and Dirichet boundary conditions. Under some suitable assumptions on the weights of feedback, we obtain the existence of a global attractor with finite fractal dimension for the case of equal speed wave propagation. Furthermore, the existence of exponential attractors is also derived.     

Existence and decay rates for a coupled Balakrishnan-Taylor viscoelastic system with dynamic boundary conditions

In this paper, we are concerned with a coupled viscoelastic wave system with Balakrishnan-Taylor dampings, dynamic boundary conditions, source terms, and past histories. Under suitable assumptions on relaxation functions and source terms, we prove the global existence of solutions by potential well theory and we establish a more general decay result of energy, in which the exponential decay and polynomial decay are only special cases, by introducing suitable energy and perturbed Lyapunov functionals.     

Reaction mechanism of NH3-SCR denitrification over rare-earth concentrate

Research on Chemical Intermediates - A rare-earth concentrate obtained from Bayan Obo tailings was used as catalyst for low-temperature selective catalytic reduction (SCR) of NOx. X-ray powder...     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.