Hall mobility of amorphous Ge2Sb2Te5

The electrical conductivity, Seebeck coefficient, and Hall coefficient of three-micron-thick films of amorphous Ge₂Sb₂Te₅ have been measured as functions of temperature from room temperature down to as low as 200 K. The electrical conductivity manifests an Arrhenius behavior. The Seebeck coefficient is p-type with behavior indicative of multi-band transport. The Hall mobility is n-type and low (near 0.07 cm²/V s at room temperature).     

Mechanism of copper underpotential deposition at Pt(<Emphasis Type="Italic">hkl</Emphasis>)-electrodes: Quantum-chemical modelling

Mechanism of copper underpotential deposition at stepped faces of platinum single crystals Pt(hkl) is studied using cyclic voltammetry, scanning probe microscopy, and quantum-chemical modelling. It is shown that the first stage of UPD is one-dimensional decoration of the (100)- or (110)-orientated steps, then copper monolayer forms at (111)-terraces. The final stage is the secondary step decoration. Quantum-chemical modelling, with the using of long-distance potentials of the Cu-Pt and Cu-Cu pair interactions, allows estimating the energy of copper adsorption at different structure elements of the substrate (steps, kinks, terraces) and revealing the succession of the adatom monolayer formation; it also provides additional information for the identifying of the nature of voltametric peaks for different stages of the copper adsorption-desorption.     

Structural and ferromagnetic properties of epitaxial SrRuO3 thin films obtained by polymer-assisted deposition

Epitaxial ferromagnetic SrRuO3 thin films with a room-temperature resistivity of 300 microOmega.cm have been successfully grown on LaAlO3(001) substrates at a processing temperature in the range of 550-750 degrees C by a polymer-assisted deposition technique. X-ray diffraction analysis shows good epitaxial quality of SrRuO3 thin films, giving values of the full width at half-maximum (FWHM) of 0.42 degrees from the rocking curve for the (002) reflection and 1.1 degrees from the in-plane phi scan for the (204) reflection. Both the resistivity and the magnetization versus temperature measurements show that the SrRuO3 films are ferromagnetic with a transition temperature of 160 K. The spontaneous magnetization near the ferromagnetic transition follows the scaling law, and the low-temperature magnetization follows the Bloch law.