首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   14篇
  免费   0篇
物理学   14篇
  2021年   3篇
  2008年   1篇
  2007年   1篇
  2005年   1篇
  2004年   1篇
  2002年   1篇
  1999年   1篇
  1997年   1篇
  1991年   1篇
  1988年   1篇
  1975年   1篇
  1974年   1篇
排序方式: 共有14条查询结果,搜索用时 15 毫秒
1.
Semi-insulating GaAs(100) substrates subjected to ion plasma etching in different regimes have been investigated by photoreflectance spectroscopy. The photoreflectance spectra of the processed samples exhibit Franz-Keldysh oscillations, which indicate a decrease in the defect density in the surface region. On the basis of the experimental data and the results of simulation of the photoreflectance spectra, optimal regimes of sample etching have been found.  相似文献   
2.
Photoreflectance spectra are measured in heterostructures with coupled quantum wells at room temperature. The energies of the optical transitions are determined, and their variation with the well width and barrier thickness is studied. The experimental results are compared with the theoretically calculated electron-hole transition energies. Good agreement is obtained for narrow wells. __________ Translated from Optika i Spektroskopiya, Vol. 93, No. 6, 2002, pp. 929–934. Original Russian Text Copyright ? 2002 by Avakyants, Bokov, Galiev, Kaminskiĭ, Kul’bachinskiĭ, Mokerov, Chervyakov.  相似文献   
3.
The carrier concentrations in Si-doped n-GaAs films have been determined by Raman and light reflection spectroscopies. The data obtained are in good agreement with the results of Hall measurements. It is shown that the light reflection and Raman spectroscopies supplement each other in determination of carrier concentrations in the range 1017?1019 cm?3.  相似文献   
4.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 49, No. 4, pp. 612–615, October, 1988.  相似文献   
5.
6.
Journal of Applied Spectroscopy - A nonequilibrium Auger transition consisting of a vacancy in the valence layer being filled within ~10–14 s by a probe electron that receives the energy...  相似文献   
7.
A study is reported of the crystallization of amorphous hydrogenated silicon films under the influence continuous radiation from an argon laser. The structure was investigated by Raman scattering of light. The radiation power density during the annealing process was 1.5–4.5 kW/cm2 and the exposure was 1/125 sec. The Raman spectra were recorded for power densities below 0.1 kW/cm2. The power density threshold for the appearance of crystallites was found to be 3.0 kW/cm2. The phonon localization model was used to show that the size of the crystallites produced for power densities of 3 kW/cm2 was 40 Å.  相似文献   
8.
Journal of Russian Laser Research - We study one-dimensional porous silicon photonic crystals by photoreflectance (PR) spectroscopy. We calculate the reflectance and PR spectra by transfer matrix...  相似文献   
9.
10.
Russian Physics Journal - The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in InGaN/AlGaN/GaN heterostructures with one filled size quantization...  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号