A New Asymmetric Long-Range Model and Algebraic Bethe Ansatz

A new integrable long-range model is derived from a new asymmetric R-matrix recently discussed by Bibikov in relation to a XXZ spin chain in an external magnetic field. The algebraic Bethe Ansatz is used to derive the eigenvalues and equations for the eigen momenta both for the usual and long-range model.     

Experimental characterization of hexatic smectic phases through electro-optic studies and dielectric relaxation spectroscopy

The electro-optic and complex dielectric behaviour of an antiferroelectric liquid crystal 4-(1-methylheptyloxycarbonyl)phenyl 4'-(n-butanoyloxyprop-1-oxy)biphenyl-4-carboxylate, having chiral SmC_A* and hexatic smectic phases, have been investigated. Complex dielectric permittivities were measured as a function of frequency, d.c. bias field and temperature. Spontaneous polarization was measured by the current reversal technique; tilt angle was measured under a polarizing microscope using a low frequency electric field. The electro-optic properties and dielectric behaviour of the material are compared with results obtained by DSC and polarizing optical microscopy. Dielectric relaxation processes in SmC_A* and hexatic smectic phases were determined. The dielectric strength at the SmC_A* to hexatic smectic phase transition is discussed in terms of coupling between the long range bond orientational order and smectic C director. It seems from the results of spontaneous polarization and dielectric relaxation spectroscopy that the material might possess an additional phase between the SmC_A* and hexatic smectic I* phases.     

Enhanced ferroelectric properties of vanadium doped bismuth titanate (BTV) thin films grown by pulsed laser ablation technique

Bi_3.99Ti_2.97V_0.03O₁₂ (BTV) thin films were grown by pulsed laser deposition at substrate temperatures ranging between 650 and 750 °C. The structural phase, and orientation of the deposited films were investigated in order to understand the effect of the deposition parameters on the properties of the BTV films. As the substrate temperature was increased to 700 °C, the films started showing a tendency of assuming a c-axis preferred orientation, while at lower temperatures polycrystalline films were formed. The Au/BTV/Pt capacitor showed an interesting dependence of the remnant polarization (P_r) as well as dc leakage current values on the growth temperature. The film deposited at 675 °C showed a very large 2P_r of 42 μC cm⁻², which is the largest for BTV thin films among the values reported so far.     

Non-protein amino acids in peptide design

An overview of the use of non-protein amino acids in the design of conformationally well-defined peptides, based on work from the author’s laboratory, is discussed. The crystal structures of several designed oligopeptides illustrate the useα-aminoisobutyric acid (Aib) in the construction of helices, D-amino acids in the design of helix termination segments and^DPro-Xxx segments for nucleating ofβ-hairpin structures.β- andγ-amino acid residues have been used to expand the range of designed polypeptide structures. Dedicated to Professor C N R Rao on his 70th birthday     

Magnetic and martensitic transitions in Ni-Fe-Ga alloy

The ferromagnetic shape memory alloy with nominal composition Ni₅₄Fe₁₉Ga₂₇ is investigated by Ac susceptibility and resistivity measurements. The alloy shows long-range ferromagnetic order below 290 K. The anomaly due to the martensitic transition is observed in the susceptibility and resistivity data in the temperature range around 220 K, which is associated with clear thermal hysteresis. Minor hysteresis loop technique was used to investigate the phase coexistence across the martensitic transition, and our analysis indicate that both martensite and austenite phases mutually coexist in the region of hysteresis.     

Amphoteric trap modeling of multidielectric scaled SONOS nonvolatile memory structures

We have characterized multidielectric scaled SONOS nonvolatile memory structures with the quasi-static linear voltage ramp (LVR) technique and dynamic pulse measurements. We have formulated physically-based ERASE/WRITE and retention methods with deep level amphoteric traps which capture and emit carriers to the bands in the silicon nitride film. Amphoteric trap parameters are extracted by the LVR technique. ERASE/WRITE and retention amphoteric trap model simulations agree well with the experimental dynamic pulse measurements. Experimental scaled SONOS structures have been fabricated with tunnel oxide X_OT=20 Å, nitride X_N=30 Å and blocking oxide X_OB=55 Å and demonstrated a static flatband shift of 3.6 V with ±5 V programming voltages. These structures may be used as the nonvolatile memory element in high density VLSI circuits.     

Controlling a bunch of multiple filaments by means of a beam diameter

We demonstrate a three orders of magnitude increase and stability in the backscattered fluorescence signal from nitrogen molecules by terawatt femtosecond laser pulse induced air filaments using a new method. The method is based on squeezing the initial beam diameter using a telescope. The effect of laser shot-to-shot fluctuations was included in numerical simulations by a random distribution of the initial intensity in both squeezed and non-squeezed beams. Statistical processing of the simulation results shows that the average diameter of plasma channels as well as the total amount of free electrons generated in a bunch of multiple filaments in air is larger in the squeezed beam. Shot-to-shot stability of the simulated plasma density increases in the squeezed beam. The change of this plasma density with propagation distance is in good qualitative agreement with the change of the range-corrected nitrogen fluorescence signal with distance. PACS 42.65.Jx; 42.60.Jf; 42.68.Ay; 42.68.Wt     

Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn²⁺3d⁵+hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state.