排序方式: 共有13条查询结果,搜索用时 31 毫秒
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Marat Satayev Birzhan Shakirov Botagoz Mutaliyeva Lazzat Satayeva Rustem Altynbekov Omirbek Baiysbay Ravshanbek Alibekov 《Heat and Mass Transfer》2012,48(6):979-987
This work covers the mathematical modeling of ultrafiltration with immobile membranes for physiologically-active of methoxyanabasine C11H16N2O polymer solution. Methoxyanabasine is used as low toxic antineoplastic drug. On the basis of theoretical and experimental analysis of mass transfer and hydrodynamics, it is offered the mathematical model of permeability of membranes at an ultrafiltration of polymer solutions. Further the formulas for determination of factor of concentration polarization and ultrafiltration selectivity are calculated. 相似文献
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Saypulaeva L. A. Gadzhialiev M. M. Alibekov A. G. Melnikova N. V. Zakhvalinskii V. S. Ril’ A. I. Marenkin S. F. Babushkin A. N. 《Physics of the Solid State》2020,62(6):942-946
Physics of the Solid State - The pressure dependences of electrical resistance, Hall coefficient, charge carrier mobilities, and magnetoresistance of the Cd3As2–20 mol % MnAs composite are... 相似文献
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Saipulaeva L. A. Gadzhialiev M. M. Pirmagomedov Z. Sh. Efendieva T. N. Alibekov A. G. Abdulvagidov Sh. B. Mel’nikova N. V. Zakhvalinskii V. S. Marenkin S. F. 《Technical Physics》2020,65(7):1083-1086
Technical Physics - Samples of tricadmium diarsenide with MnAs nanogranules (44.7 mol % MnAs) are synthesized. The morphology of the samples is studied by X-ray phase analysis and electron... 相似文献
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A. Yu. Mollaev S. F. Marenkin A. G. Alibekov R. K. Arslanov A. N. Babushkin L. A. Saipulaeva A. V. Teben’kov 《Russian Journal of Inorganic Chemistry》2013,58(3):350-353
Kinetic effects in p-ZnAs2 were measured at hydrostatic (P ≤ 9 GPa) and quasi-hydrostatic (to P ≤ 50 GPa) pressures on pressure buildup and depressurization. A conclusion on the occurrence of two phase transitions was made: I–II at P = 9–15 GPa and II-III at P = 30–35 GPa. Based on the temperature dependences of electrical resistance, it was shown that the conductivity is determined by activation mechanisms in a temperature range of 250–400 K; in this case, the activation energy changed with temperature and pressure. The pressure dependences of the activation energy and the coefficient R 0, which characterizes the mobility, concentration, and effective mass of carriers, were calculated. 相似文献
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E. M. Zobov A. Yu. Mollaev L. A. Saipulaeva A. G. Alibekov N. V. Melnikova 《Physics of the Solid State》2016,58(12):2457-2459
This paper presents the results of the investigation of the energy spectrum of electronic states due to trapping centers, the role of which in CuInAsS3 is played by lattice defects. The results of the analysis of the thermally stimulated current curves of CuInAsS3 demonstrate that the energy spectrum of trapping centers is localized under the bottom of the conduction band in the energy range E C–(0.14–0.35) eV. 相似文献
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N. V. Melnikova Yu. A. Kandrina A. V. Tebenkov E. A. Stepanova A. N. Babushkin A. Yu. Mollaev L. A. Saipulaeva A. G. Alibekov 《Physics of the Solid State》2017,59(1):89-92
The effect of temperatures (2–300 K) and high pressures (to 50 GPa) on the electrical and magnetic properties of crystalline materials based on copper and indium chalcogenides with the general formula (InB)1?x (CuAB 2)x, where A = As, Sb; and B = S, Se, and also crystalline CuInSe2 and CuInS2, has been studied. 相似文献
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N. V. Melnikova A. V. Tebenkov G. V. Sukhanova A. N. Babushkin L. A. Saipulaeva V. S. Zakhvalinskii S. F. Gabibov A. G. Alibekov A. Yu. Mollaev 《Physics of the Solid State》2018,60(3):494-498
The pressure dependences of thermal emf (a parameter that ranks among the most sensitive to phase transformations) are studied for the purpose of identifying baric phase transitions in the 10–50 GPa interval in the Cd3As2 + MnAs (44.7% MnAs) structure formed by ferromagnetic MnAs granules in a semiconductor Cd3As2 matrix. 相似文献
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L. A. Saipulaeva F. S. Gabibov N. V. Mel��nikova A. G. Alibekov O. L. Kheifets A. N. Babushkin K. V. Kurochka 《Journal of Experimental and Theoretical Physics》2012,115(5):918-924
The results of investigation of the electrophysical and photoelectric properties of complex copper chalcogenides are presented, namely, the properties of CuSnAsSe3, which exhibits ferroelectric properties, and CuInAsS3, which exhibits ionic conductivity. The spectral and temperature regions of photosensitivity of these crystals are determined. The depth of the level of carrier trapping centers, which manifest themselves under thermal activation, are evaluated from the analysis of thermally stimulated conductivity (TSC) curves in CuInAsS3. 相似文献