Autocatalytic oxidation of Fe(Phen)3 2+ by bromate in water-in-oil reverse micelles of AOT

Autocatalytic oxidation of ferroin by bromate in water-in-oil reverse micelles of AOT has been studied experimentally and theoretically. The simplest models for this process have been constructed. Analytical solutions for these models were found for some limiting cases. It has been shown that the autocatalytic reaction runs much more slowly in reverse micelles than in water. The dependencies of the maximum reaction rate, _max, the exponent of the increase in ferriin concentration, , and induction period, , on micelle concentration have been obtained at =[H₂O]/[AOT]=4.6. It was found that there is only one theoretical model which can explain the experimental data. The values of the elementary reaction rate constantsk _i were estimated on the basis of the theoretical dependencies of _max and on the constantsk _i . All elementary rate constants turned out to be two or three orders of magnitude smaller than the corresponding constants for the reaction proceeding in water. The decrease in the rate constants is explained by the increase in viscosity and pH in a micellar water core at low .Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 8, pp. 1401–1407, August, 1993.This work was supported by the Russian Foundation for Fundamental Investigations through Research Grant 93-03-4090.     

Influence of growth conditions on the surface quality and structural perfection of multicomponent heterostructures based on group A3B5 compounds

The surface quality of epitaxial multicomponent layers based on group A³B⁵ compounds, which are grown under different conditions via floating-zone refining with a temperature gradient, is comprehensively analyzed. The main parameters (temperature gradient, solution-melt composition, supercooling level, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and substrate orientation) affecting the surface quality and structural perfection of the heterostructures are determined.     

Thin-layer GaInSbAsPBi/GaSb heterostructures obtained from liquid phase in a temperature-gradient field

The results of growing thin epitaxial GaInSbAsPBi layers on a GaSb substrate from a liquid bismuth-containing zone in a temperature-gradient field are discussed. The composition and properties of GaInSbAsPBi/GaSb heterostructures are investigated.     

Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates

The results on the growth of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates from the liquid phase in a field of temperature gradient have been discussed. The heterophase equilibria in the Ga–In–P–Sb–As system have been analyzed in the framework of the regular solution model. The kinetics of the growth, the composition, the structural perfection, and the luminescence properties of Ga_zIn_1–zP_xSbyAs_1–x–y/InAs isoperiodic heterostructures have been investigated.     

Phase Transitions in Bismuth-Containing Elastostressed AlGaInSbBi–InSb Heterosystems

Physics of the Solid State - The specific features of phase transitions in elastostressed Al–Ga–In–Sb–Bi heterosystems and In–Sb–Bi and Al–In–Bi...     

Investigation of the Structural Perfection of Thin-Film InAlGaPAs/GaAs Heterostructures

The influence of growth conditions on the structural perfection of thin-film InAlGaPAs/GaAs heterostructures is discussed. The main determined growth parameters are the growth temperature and its gradient, liquid-zone thickness, matching between lattice parameters and the thermal expansion coefficients of the layer and substrate, and dislocation density in the substrate.     

A study of photosensitive InAs/GaAs heterostructures with quantum dots grown by ion-beam deposition

The possibility of obtaining ion-beam-deposited InAs/GaAs heterostructures with quantum dots for photovoltaic converters is shown. The surface morphology of the grown heterostructures is analyzed by scanning probe microscopy. Quantum dots and InAs nanoclusters with planar dimensions from 20 to 100 nm and a height from 5 to 80 nm are detected. The average surface density of quantum-dimensional InAs objects with a size below 35 nm is 10⁵ mm⁻². In the photoluminescence spectra (T = 300 K), a peak is revealed with a maximum at the wavelength λ = 1150 nm (hν ≈ 1.1 eV), which shows that the grown heterostructures contain InAs quantum dots of various sizes.