Oxidation kinetics of thin titanium films grown on tungsten

Growth of thin Ti films on (100)W and the kinetics of their oxidation are studied using thermal-desorption spectroscopy and Auger electron spectroscopy. Titanium films grow nearly layer by layer on the (100)W face at room temperature. The activation energy for desorption of Ti atoms decreases from 5.2 eV for coverage θ=0.1 to 4.9 eV in a multilayer film. Oxidation of a thin (θ=6) titanium film starts with dissolution of oxygen atoms in its bulk to the limiting concentration for a given temperature, after which the film oxidizes to TiO, with the TiO₂ oxide starting to grow when exposure of the film to oxygen is prolonged. The thermal desorption of oxides follows zero-order kinetics and is characterized by desorption activation energies of 5.1 (TiO) and 5.9 eV (TiO₂).     

Electron-stimulated desorption of potassium and cesium atoms from an oxidized molybdenum surface

The yield and energy distributions of potassium and cesium atoms emitted in electron-stimulated desorption (ESD) from a molybdenum surface, oxidized to different extent and maintained at 300 K, have been measured by the time-of-flight technique with a surface ionization detector. The ESD threshold for potassium and cesium atoms lies around 25 eV, irrespective of molybdenum oxidation state. In the case of molybdenum coated by an oxygen monolayer, secondary thresholds at ∼40 and ∼70 eV have been observed, as well as atomic energy distribution tailing down to very low energies. The most probable kinetic energies of the atoms are a few tenths of one eV. The results are explained within a model involving Auger neutralization of the adsorbed alkali metal ions after the filling of the 2s O, 4s Mo, and 4p Mo core holes. The possibility of ESD of a neutral species as a result of oxide-cation core-level ionization has been demonstrated for the first time. Fiz. Tverd. Tela (St. Petersburg) 39, 758–761 (April 1997)     

Actions by automorphisms of commutative compact groups with a countablefold Lebesgue component in the spectrum

Translated from Matematicheskie Zametki, Vol. 49, No. 2, pp. 14–22, February, 1991.     

The reaction of thiocaprylic acid with methyl thiocyanate

Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 9, pp. 2154–2155, September, 1989.     

Liquid chromatography of benzene derivatives on a porous methacrylate copolymer containing epoxy groups

Summary The retention of benzene derivatives with nonpolar and polar substituents on a porous methacrylate copolymer containing epoxy groups using both nonpolar and polar eluents was investigated. When n-hexane is used as the eluent, the retention of n-alkylbenzenes and polymethylbenzenes is weaker than that of benzene. In the case of benzene derivatives containing polar functional groups their capacity ratios (k) on this porous polymer increases approximately linearly with the increase of the adsorbate molecules dipole moment. The retention characteristics of the methacrylate copolymer were compared with that of a styrene-divinylbenzene copolymer and silica gels with a hydroxylated surface and with a surface modified by chemically bonded alkylsilyl groups.     

Homolytic dissociation of the carbon-element σ bonds by Grignard reagents

The reaction of 2-ethyl-3-tetrahydrofuryl thiocyanate (I) and triphenylacetonitrile (VIII) with methylmagnesium iodide in ether was studied using GC/MS, PMR and¹³C NMR spectroscopy. The reaction of (I) with CH₃MgI gives the product of the homolysis of the C-S bond, namely, bis(2-ethyl-3-tetrahydrofuryl) disulfide (II), in 81% yield. This reaction is assumed to be general in nature since triphenylacetonitrile (VIII) is also homolytically cleaved by the action of CH₃MgI to give triphenylmethane.Translated from Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, No. 12, pp. 2886–2888, December, 1991.     

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10⁻⁴ Torr to 3 × 10⁻² Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 10¹⁷ cm⁻³ to (42.64 ± 4.46) × 10¹⁷ cm⁻³, electron mobility from 0.25 ± 0.03 cm²/(V·s) to 7.12 ± 1.32 cm²/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 10⁶ Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 10³ Ω, and the ratio R_HRS/R_LRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.     

Shear Flow of a Viscous Fluid over a Cavity with a Pulsating Gas Bubble

Doklady Physics - For the first time, the effect of pressure fluctuations on the averaged shear stress in a shear viscous flow over a two-dimensional rectangular microcavity containing a pulsating...