Microwave optoelectronics

The low-loss, wide-bandwidth capability of optoelectronic systems makes them attractive for the transmission and processing of microwave signals. This paper considers the technology required for generating, transmitting and detecting microwave modulated optical signals. It also reviews the developing research area of directly optically controlled microwave devices, and describes some typical microwave optoelectronic systems applications.     

Copper and iron interactions with angiotensin-converting enzyme inhibitors. A study by fast-atom bombardment tandem mass spectrometry

Fast atom bombardment, combined with high-energy collision-induced tandem mass spectrometry, has been used to investigate gas-phase metal-ion interactions with captopril, enalaprilat and lisinopril, all angiotensin-converting enzyme inhibitors.Suggestions for the location of metal-binding sites are presented. For captopril, metal binding occurs most likely at both the sulphur and the nitrogen atom. For enalaprilat and lisinopril, binding preferably occurs at the amine nitrogen. Copyright 1999 John Wiley & Sons, Ltd.     

Modeling of the dynamics of multi-section waveguide lasers

A dynamic model for the design of multi-section semiconductor lasers is developed based on the Transmission Line Method. The different building blocks of this model are presented and the model is evaluated for a tunable two-section laser device.     

95 GHz millimeter wave signal generation using an arrayed waveguide grating dual wavelength semiconductor laser

We report the generation of a 95?GHz carrier frequency by optical heterodyning of two wavelengths from adjacent channels from an arrayed waveguide grating-based multiwavelength laser. The extended cavity structure of the device provides low phase noise and narrow optical linewidth, further enhanced by the intracavity filter effect of the arrayed waveguide grating. We demonstrate that the generated RF beat note, at 95?GHz, has a -3 dB linewidth of 250?kHz. To the best of our knowledge, this is the narrowest RF linewidth generated from a free-running dual-wavelength semiconductor laser. The device is realized as a photonic integrated circuit using active-passive integration technology, and fabricated on a multiproject wafer run, constituting a novel approach for a compact, low-cost dual-wavelength heterodyne source.     

Experiments on 40 Gb/s Transmission with Wavelength Conversion: Results from the IST ATLAS Project

In this article we report the main experimental results obtained in the framework of the IST ATLAS project regarding the transmission at 40 Gb/s over long terrestrial links, including the frequency conversion of a signal. We report the single-channel 40 Gb/s transmission over a link 500 km long with an amplifier spacing of 100 km, both with G.652 fibers and G.653 fibers by periodically compensating the chromatic dispersion with dispersion-compensating fibers. We report the single-channel transmission at 40 Gb/s, also, after the wavelength conversion of a channel with both PPLN and semiconductor optical amplifier devices. In particular, 500 km distances are obtained with PPLN wavelength conversion and 300 km distances with semiconductor optical amplifiers. Some results have been reported for electronic devices operating at 40 Gb/s.