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采用传统固相法和水热法成功地制备出棒状La2Zr2O7:Eu3+荧光粉. 利用X射线粉末衍射仪、透射电镜和荧光光谱仪等分析了产物的结构、形貌和发光特性. 结果表明红色荧光粉La2Zr2O7:Eu3+有良好的晶相,属于立方结构,空间点群为Fd3m; 其形貌主要为纳米棒, 平均直径约47 nm, 长度为50~700 nm. 并对纳米棒的生长机理进行了探讨. 在466 nm蓝光激发下,La2Zr2O7:Eu3+荧光粉能发射出Eu3+的特征红色荧光,发射主峰位于616 nm处,归属于Eu3+的5DO→7F2超灵敏电偶极跃迁.此外,在产物的发射光谱中能够观察到5D1→7FJ (J=0, 1, 2)跃迁和5D1→7FJ (J=1, 2, 4)跃迁的劈裂峰,这说明Eu3+处在低对称性的晶体场格位中. 相似文献
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以Y2O3、Eu2O3和NH4VO3为初始原料,用Na2CO3作助熔剂,采用高温固相法成功制备出棒状YVO4/Eu3+荧光粉;利用X射线粉末衍射仪、透射电镜、扫描电镜、荧光光谱仪等分析了产物的结构、形貌和发光特性,并探讨了其生长机理.结果表明:YVO4/Eu3+属于四方锆石型结构,空间群为I41/amd;其形貌为微米棒状,平均直径约0.20μm,平均长度约1.16μm.在395nm紫外光激发下,YVO4/Eu3+荧光粉能发出Eu3+的特征红色荧光,发射主峰位于616nm,归属于Eu3+离子的5 D0→7F2电偶极跃迁. 相似文献
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Well-crystallized with excellent luminescent properties, Tb(BO2)3 nanorods were first suc-cessfully synthesized by a simple solid-state method with Ag as catalyst. The result of X-ray diffraction showed that the Tb(BO2)3 nanorods could be well-crystallized at 700 oC. As-prepared straight nanorods of Tb(BO2)3 had the typical diameters in the range of 100-200 nm, the thickness of 30-50 nm and the lengths up to 3 μm by transmission elec-tron microscopy and the corresponding selected area electron diffraction indicated that the nanorod calcined at 700 oC was single-crystalline. Based on the fact that Ag nanoparti-cles attached to the tips and middles of the Tb(BO2)3 nanorods, a growth model of the Tb(BO2)3 nanorods was proposed. Photoluminescence spectra under excitation at 369 nm showed that these Tb(BO2)3 phosphors had a green emission at 546 nm, which is ascribed to 5D4→7F5 transition. The effect of calcining temperature on the structures, morphologies, and luminescent properties of Tb(BO2)3 phosphors were studied. 相似文献
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钛酸钡基半导化陶瓷中的PTCR效应通常与材料中的施受主掺杂切相关,蒸汽掺杂能够大幅度影响材料的PTCR效应。CdO在高温下具有较高的蒸汽压,是一种适用的蒸汽掺杂剂,研究了CdO以及CdO蒸汽对掺Y^3+的Ba1-xSrxTiO3陶瓷的PTCR效应的影响,结果首次发现了Cd^2+掺杂样品的PTCR效应都有不同程度的提高,采用蒸汽掺杂时,效果更为显著。现有的理论很难解释Cd^2+掺杂能够提高钛酸钡基材料PTCR效应。我们从缺陷化学的角度,分析了Cd^2+在BaTiO3基材料中的行为,推断表明这种现象可能是由于铁电相变时,处于晶界区的Cd^2+在Ba位和Ti位之间转换造成的。 相似文献
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Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs
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We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors(HEMTs).A 200 W NH3/N2 remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration,which results in a decrease in sheet resistance and an increase in output current by 20-30%.Improved current slump,suppressed gate leakage current,and improved Schottk... 相似文献
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证明交换von Neumann代数到其单位Banach双模内的每个正则局部n-上循环都是n-上循环. 相似文献