SOI纳米线波导导光机理的物理分析

SOI（silicon-on-insulator）纳米线波导及其器件是近年来光电子学领域研究的重点内容之一．文章从基本的导波光学理论出发,引入古斯一汉森位移理论,对SOI纳米线波导导光的物理机制进行了分析并给出了物理解释和模拟结果．     

Design, fabrication and characterization of a high-performance microring resonator in silicon-on-insulator

A high-performance microring resonator in a silicon-on-insulator rib waveguide is realized by using the electron beam lithography followed by inductively coupled plasma etching. The design and the experimental realization of this device are presented in detail. In addition to improving relevant processes to minimize propagation loss, the coupling efficiency between the ring and the bus is carefully chosen to approach a critical coupling for high performance operating. We have measured a quality factor of 21,200 and an extinction ratio of 12.SdB at a resonant wavelength of 1549.32nm. Meanwhile, a low propagation loss of 0.89dB/mm in a curved waveguide with a bending radius of 40μm is demonstrated as well.     

Sub-nanosecond optical switch based on silicon racetrack resonator

<正>We experimentally demonstrate a small-size and high-speed silicon optical switch based on the free carrier plasma dispersion in silicon.Using an embedded racetrack resonator with a quality factor of 7400,the optical switch shows an extinction ratio exceeding 13 dB with a footprint of only 2.2×10~(-3)mm~2.Moreover,a novel pre-emphasis technique is introduced to improve the optical response performance and the rise and the fall times are reduced down to 0.24 ns and 0.42 ns respectively,which are 25%and 44%lower than those without the pre-emphasis.