Scanning tunnelling microscope studies of growth of RuO2（110） thin layer on Ru（0001）

This paper reports that the growth of RuO_x(110) thin layer growth on Ru(0001) has been investigated by means of scanning tunnelling microscope (STM). The STM images showed a domain structure with three rotational domains of RuO_x(110) rotated by an angle of 120℃. The as-grown RuO_x(110) thin layer is expanded from the bulk-truncated RuO_x(110) due to the large mismatch between RuO_x(110) and the Ru(0001) substrate. The results also indicate that growth of RuO_x(110) thin layer on the Ru(0001) substrate by oxidation tends first to formation of the Ru-O (oxygen) chains in the [001] direction of RuO_x(110).     

Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2

Hybrid organic-inorganic perovskite thin films have attracted much attention in optoelectronic and information fields because of their intriguing properties. Due to quantum confinement effects, ultrathin films in nm scale usually show special properties. Here, we report on the growth of methylammonium lead iodide (MAPbI₃) ultrathin films via co-deposition of PbI₂ and CH₃NH₃I (MAI) on chemical-vapor-deposition-grown monolayer MoS₂ as well as the corresponding photoluminescence (PL) properties at different growing stages. Atomic force microscopy and scanning electron microscopy measurements reveal the MoS₂ tuned growth of MAPbI₃ in a Stranski-Krastanov mode. PL and Kelvin probe force microscopy results confirm that MAPbI₃/MoS₂ heterostructures have a type-II energy level alignment at the interface. Temperaturedependent PL measurements on layered MAPbI₃ (at the initial stage) and on MAPbI₃ crystals in averaged size of 500 nm (at the later stage) show rather different temperature dependence as well as the phase transitions from tetragonal to orthorhombic at 120 and 150 K, respectively. Our findings are useful in fabricating MAPbI₃/transition-metal dichalcogenide based innovative devices for wider optoelectronic applications.     

加速器射线衰减模拟方法研究

本文通过对低能加速器运行期间产生的射线种类、原理、能量进行分析,结合姜灿、陆用义等人对射线衰减及防护的研究,对射线衰减计算方法进行整理,对加速器运行时产生的射线剂量当量率加以修正,建立加速器射线衰减理论模型;以低能加速器的最大能量为例,利用加速器射线衰减模拟方法计算出低能串列静电加速器运行产生的射线剂量当量率,模拟出其产生的射线衰减规律,丰富了加速器射线衰减计算领域的理论研究,为加速器安全性的评估奠定基础。     

tetracene分子在Ru(100)表面的吸附结构及其电子态研究

利用紫外光电子能谱(UPS)、角分辨紫外光电子能谱(ARUPS)和扫描隧道显微镜(STM)等方法研究了tetracene分子在Ru(100)表面上吸附的电子态,吸附位置和吸附取向.UPS实验显示,与tetracene分子有关的光电子谱峰在费米能级以下2.1,3.5,4.8,6.0,7.1和9.2eV处;ARUPS结果表明,tetracene分子的分子平面基本平行于衬底表面;从STM图像中可以看到tetracene分子的长轴沿[0001]和[1■10]两个晶向.基于密度泛函理论的从头算计算证实了上述结论.当分子长轴沿[0001]晶向时,分子中心位置在衬底表面的“短桥位”上,当分子长轴沿[1210]晶向时,分子中心位置在衬底表面的“四原子中心空位”上.     

有机半导体在金属Ru(0001)上的界面特性研究

关键词：     

Ag(111)和Au(111)上铋的初始生长行为

半金属铋(Bi)的表面合金具有的Rashba效应,和其具体结构性质有重要关联.本文结合扫描隧道显微镜(STM)和密度泛函理论(DFT),系统地研究了Bi原子在Ag(111)和Au(111)上的不同初始生长行为.在室温Ag(111)上,连续的Ag2Bi合金薄膜会优先在Ag台阶边缘形成;在570 K Ag(111)上,随着...     

tetracene 分子在Ru(1010)表面的吸附结构及其电子态研究

利用紫外光电子能谱(UPS)、角分辨紫外光电子能谱(ARUPS)和扫描隧道显微镜(STM)等方法研究了tetracene分子在Ru(1010)表面上吸附的电子态，吸附位置和吸附取向.UPS实验显示，与tetracene分子有关的光电子谱峰在费米能级以下2.1, 3.5, 4.8, 6.0, 7.1和9.2 eV处；ARUPS 结果表明，tetracene分子的分子平面基本平行于衬底表面；从STM图像中可以看到tetracene分子的长轴沿［0001］和［1210］两个晶向.基于密度泛函理论的从头算计算证实了上述结论.当分子长轴沿［0001］晶向时，分子中心位置在衬底表面的“短桥位”上，当分子长轴沿［1210］晶向时，分子中心位置在衬底表面的“四原子中心空位”上. 关键词： tetracene分子 Ru(1010)表面 吸附结构 吸附电子态     

Growth,characterization, and Raman spectra of the 1T phases of TiTe2, TiSe2, and TiS2

High-quality large 1$T$ phase of Ti$X_2$ ($X ={\rm Te}$, Se, and S) single crystals have been grown by chemical vapor transport using iodine as a transport agent. The samples are characterized by compositional and structural analyses, and their properties are investigated by Raman spectroscopy. Several phonon modes have been observed, including the widely reported $A_{1g}$ and $E_g$ modes, the rarely reported $E_u$ mode ($\sim$183 cm$^{-1}$ for TiTe$_2$, and $\sim$185 cm$^{-1}$ for TiS$_2$), and even the unexpected $K$ mode ($\sim$85 cm$^{-1}$) of TiTe$_2$. Most phonons harden with the decrease of temperature, except that the $K$ mode of TiTe$_2$ and the $E_u$ and "$A_{2u}$/Sh" modes of TiS$_2$ soften with the decrease of temperature. In addition, we also found phonon changes in TiSe$_2$ that may be related to charge density wave phase transition. Our results on Ti$X_2$ phonons will help to understand their charge density wave and superconductivity.     

Ag(110)表面吸附酞菁铜分子的紫外光电子谱研究

用紫外光电子能谱(UPS)研究了酞菁铜分子在Ag(110)单晶表面上的吸附,随着酞菁铜分子覆盖度增加,衬底Ag的3d电子信号逐渐减弱,在此能带区域出现两个新的谱峰,这两个与吸附有机分子轨道有关的谱峰的束缚能分别为4.45 和6.36 eV.随着覆盖度的增加,在结合能为1.51和9.20 eV处又出现了两个谱峰,它们同样来自吸附有机分子的轨道.随着覆盖度的继续增加,上述四个谱峰的强度逐渐增加,其能量位置均发生了明显的偏移.根据角分辨光电子能谱的实验结果,酞菁铜分子的分子平面基本与衬底表面平行.密度泛函理论计 关键词： 酞菁铜 紫外光电子谱 吸附电子态 密度泛函理论     

银(110)表面苝有序薄膜电子态的研究

运用紫外光电子能谱(UPS)和低能电子衍射(LEED)技术,对银(110)表面上有机分子苝（perylene）的生长进行了研究.有机分子价带的4个特征峰分别位于费米能级以下3.5、4.8、6.4和8.5 eV处.当有机薄膜约为单分子层(厚度为0.3 nm)时, 苝在银(110)表面上形成C(6×2)的有序结构.角分辨紫外光电子能谱(ARUSP)的测量显示:在界面处的苝分子平面平行于衬底.苝在银(110)表面稳定性很高,随着对衬底加热，有机材料发生脱附,在140 ℃以下没有观察到分解现象.