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以十一碳烯醇和碘戊烷为原料,经过苯甲酰基保护、9-硼双环[3.3.1]-壬烷(9-BBN)硼氢化后氧化、氯铬酸吡啶盐(PCC)氧化、Wittig反应、脱苯甲酰基五步反应得到顺-11-十六碳烯-1-醇(Z11-16:OH),五步反应总收率53%.顺-11-十六碳烯-1-醇经PCC氧化或Ac2O乙酰化分别得到顺-11-十六碳烯-1-醛(Z11-16:Ald)、顺-11-十六碳烯-1-醇乙酸酯(Z11-16:Ac),目标化合物及主要中间体结构经NMR,IR和MS确证.合成方法路线短,操作简便,收率较文献中的方法有较大提高. 相似文献
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The effect of annealing condition on sputtered indium tin oxide (ITO) films on quartz with the thickness of 200 nm is characterized to show enhanced optical transparency and optimized electrical contact resistivity. The as-deposited grown ITO film exhibits only 65% and 80% transmittance at 532 and 632.8 nm, respectively. After annealing at 475 ℃ for 15 min, the ITO film is refined to show improved transmittance at shorter wavelength region. The transmittances of 88.1% at 532 nm and 90.4% at 632.8 nm can be obtained. The 325-nm transmittance of the post-annealed ITO film is greatly increased from 12.7% to 41.9%. Optimized electrical property can be obtained when annealing below 450 ℃, leading to a minimum sheet resistance of 26 Ω/square. Such an ITO film with enhanced ultraviolet (UV) transmittance has become an alternative candidate for applications in current UV photonic devices. The morphology and conductance of the as-deposited and annealed ITO films are determined by using an atomic force microscopy (AFM), showing a great change on the uniformity distribution with finite improvement on the surface conductance of the ITO film after annealing. 相似文献
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