A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal–oxide semiconductor field-effect transistors (MOSFETs) is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson–Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.     

CaIrO3薄膜中的八面体扭转及金属绝缘转变

本文采用激光脉冲沉积(pulsed laser deposition,PLD)方法在NdGaO3(110)(NGO)和(LaAlO_3)_(0.3)(Sr_2AlTaO_6)_(0.7)(001)(LSAT)衬底上生长了厚度变化的钙钛矿结构CaIrO3(CIO)单晶薄膜.在这一体系中,我们观测到了金属绝缘转变现象以及各向异性电输运行为,并且尝试利用应变弛豫调节铱氧八面体绕[100]轴的扭转角度,改变金属绝缘转变温度(TMI).八面体的扭转角度在30nm厚的样品中取得了最大值,同时CIO的TMI取得了最小值.我们推测是八面体的扭转影响了CIO薄膜的带隙宽度,从而造成了TMI的变化以及各向异性电输运行为.     

基于冠层光谱的水稻穗颈瘟病害程度预测模型

对水稻稻瘟病病害程度的定量预测是精准防控的关键,田间冠层尺度的研究可为高光谱传感器提供理论基础.以受穗颈瘟胁迫的水稻为研究对象,采用SVC HR768i型光谱辐射仪在大田中获取灌浆期两个不同时间段的水稻冠层光谱反射率,以水稻发病株数百分比作为病害严重程度指标.冠层光谱数据采用九点平滑预处理,并重采样为1 nm间隔,计算...