全光扫描装置设计及实验研究

针对惯性约束聚变研究中高时间分辨测量的需求,详细分析并设计了一种新型的高时间分辨的全光扫描装置。该装置根据光生载流子效应、波导传输和棱镜色散原理,采用全光学元件,实现了全光器件的类条纹相机扫描功能。设计制作了具有棱镜结构和光偏转功能的全光扫描模块。以1053 nm激光为传输光,527 nm激光为泵浦光,完成了脉宽为8 ps的脉冲激光信号作用下的光偏转实验。从技术上验证了全光扫描技术的可行性。     

Electronic band structure of a type-II ’W’ quantum well calculated by an eight-band k·p model

In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga_1-xIn_xSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k?p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period---AlSb/InAs/Ga_1-xIn_xSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga_1-xIn_xSb layer and the alloy composition in Ga_1-xIn_xSb separately. In the last part, in order to compare the eight-band k?p model, we recalculate the conduction bands of the 'W' structure using the one-band k?p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.     

High power red-light GalnP/AlGalnP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing

The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580℃ for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580℃. When the blue shift was 24.7 meV at 480℃, the COD power for the window LD was 86.7% higher than the conventional LD.     

带有锥形增益区14xxnm量子阱激光器的研制

利用MOCVD生长了14xxnm AlGaInAs/AlInAs/InP应变量子阱外延片.采用带有锥形增益区脊型波导结构和普通条形脊型波导结构在相同的实验条件下制作800 μm腔长激光器管芯,在相同的驱动电流下前者可以获得更高的输出光功率,而且P-Ⅰ曲线线性度较好、饱和电流高. 1200 μm腔长带有锥形增益区脊型波导结构管芯功率达到500 mW,饱和电流3 A以上,峰值波长1460 nm,远场发散角为39°×11°.     

Effective absorption enhancement in small molecule organic solar cells using trapezoid gratings

We demonstrate that the optical absorption is enhanced in small molecule organic solar cells by using a trapezoid grating structure. The enhanced absorption is mainly attributed to both waveguide modes and surface plasmon modes, which is simulated by using finite-difference time-domain method. The simulated results show that the surface plasmon along the semitransparent metallic Ag anode is excited by introducing the periodical trapezoid gratings, which induce the increase of high intensity field in the donor layer. Meanwhile, the waveguide modes result in a high intensity field in acceptor layer. The increase of field improves the absorption of organic solar cells significantly, which is demonstrated by simulating the electrical properties. The simulated results also show that the short-circuit current is increased by 31% in an optimized device, which is supported by the experimental measurement. Experimental result shows that the power conversion efficiency of the grating sample is increased by 7.7%.     

长周期光纤光栅温度稳定性分析及其改善

利用模式耦合理论推导出长周期光纤光栅(LPG)温度特性的一般关系式;通过测试周期为400～600μm的长周期光纤光栅的温度特性,确定了芯内导模与被耦合的不同包层模间的热光系数差,并结合长周期光栅温度特性关系式总结出长周期光栅温度灵敏度与光栅周期和耦合包层模阶次的对应关系;在理论与实验的基础上,提出了改善长周期光栅温度稳定性的方法。     

用布拉格光纤光栅制作啁啾光纤光栅

介绍了一种用布拉格光纤光栅制作啁啾光纤光栅的方法。采用氢氟酸腐蚀布拉格光纤光栅, 使光栅的横截面沿光栅轴向逐渐变小, 然后对光栅施加１．５０ Ｎ的拉力, 在光栅轴向建立应变梯度, 制作出长１５ ｍ ｍ 、峰值反射率达９２％ 、反射半高宽为５ ｎｍ 的啁啾光纤光栅。     

表面等离子激元调制的亚波长束斑半导体激光器

近场有源探针可以解决近场光学扫描显微镜等应用中对高亮度和高光功率的需求.提出一种制备具有表面等离子激元结构的微纳束斑的半导体激光器的设计方案.模拟分析表明,此激光器在3.5 μm的远场仍然可以获得小于波长的束斑,并且其输出功率密度与没有表面激元结构的激光器比较提高近30倍.     

条形半导体激光器光束质量因子M2的理论计算

通过一个二维半矢量模型求得纯折射率导引脊形波导和掩埋波导这两种常见平面条形半导体激光器波导结构的模式光场分布，现通过描述光束传播的非傍轴矢量二阶矩，通过平面波谱的方法获得激光器出射光束在横向和侧向上的束腰、远场发散角和M^2因子。讨论了波导结构参量变化对M^2因子的影响，并对两种波导结构光束的性质与波导参量的关系进行了比较。