High Performance Long Wavelength Superlattice Photodetectors Based on Be Doped Absorber Region

The effect of Be doping on the quantum efficiency and the dark current of InAs/GaSb long-wavelength infrared superlattice photodetectors grown by molecular-beam epitaxy on GaSb substrates are reported. A significant improvement of quantum efficiency （QE） with p-type doping is demonstrated. Our results show that Be doping level at 2.5 × 10^15 cm^3 gives the highest quantum efficiency of product 28%. We also demonstrate that the increased QE is not only resulted from the longer minority carrier diffusion length, but also the p-n junction location change. Finally, the result also shows that the sample with a doping density of 2,5 × 10^15 cm^3 has the largest D＊ as 8.68 × 10^10 cm.Hz^l/2.W^-1, which is almost five times D＊ of the non-intentionally doped one.     

融石英表面高质量亚波长光栅结构的飞秒激光加工EI北大核心CSCD

采用钛蓝宝石飞秒激光加工系统在融石英表面诱导表面周期性微纳结构,研究了激光诱导表面周期结构的形成过程以及激光能量密度、脉冲数、光斑大小和脉冲的空间间隔对融石英表面激光诱导表面周期结构的形貌的影响。实验结果表明,飞秒激光在融石英表面可以诱导出周期性的亚波长结构,主要以垂直于激光偏振方向的光栅状结构为主,其周期在百纳米量级且具有更好的可复现性。在激光光斑控制在1μm附近时,所得到的形貌具有较高的规则性。根据实验结果设计了聚焦高斯光斑低通量的加工方式。所制备的光栅结构具有200~300 nm的周期,平均深度约为300 nm。