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Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching*
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We use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE). Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection. 相似文献
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