Finger capacitance of a terahertz photomixer in low-temperature-grown GaAs using the finite element method

Interdigitated finger capacitance of a continuous-wave terahertz photomixer is calculated using the finite element method.For the frequently used electrode width(0.2 μm) and gap width(1.8 μm),the finger capacitance increases quasi-quadratically with the number of electrodes increasing.The quasi-quadratic dependence can be explained by a sequence of lumped capacitors connected in parallel.For a photomixer composed of 10 electrodes and 9 photoconductive gaps,the finger capacitance increases as the gap width increases at a small electrode width,and follows the reverse trend at a large electrode width.For a constant electrode width,the finger capacitance first decreases and then slightly increases as the gap broadens until the smallest finger capacitance is formed.We also investigate the finger capacitances at different electrode and gap configurations with the 8 μm× 8 μm photomixer commonly used in previous studies.These calculations lead to a better understanding of the finger capacitance affected by the finger parameters,and should lead to terahertz photomixer optimization.     

结构光照明超分辨光学显微成像技术与展望

结构光照明显微镜(Structured Illumination Microscopy,SIM)通过结构化照明在频率域以空间混频的方式将物体高频信息载入光学系统的探测通带内实现突破衍射极限的超分辨光学显微成像。SIM凭借其较低的激发光强、对荧光染料的非特异性需求以及快速的宽场成像优势已成为活细胞超分辨光学显微成像方面应用最多的技术。本文系统回顾了SIM的技术进展,对SIM的基本原理与实现方法进了详细的分析,重点介绍了本课题组研发的基于光谱分辨的单光子激发超分辨显微镜和结合自适应光学的双光子激发超分辨显微镜这两种最新的SIM技术,最后简要讨论了SIM技术在生物成像中的应用及未来发展方向。