Single Crystal Si Layers on Glass Fabricated by Hydrophilic Fusion Bonding and Smart-Cut Technology

A single crystal Si thin film on a glass substrate has been obtained successfully by hydrophilic fusion bonding and the smart-cut technology. Tensile strength testing shows that the bonded interface has strong adhesion and the bonding strength is about 8.7MPa. Crystallinity and microstructure of the samples have been characterized by transmission electron microscopy (TEM). Electrical properties have also been investigated by Hall measurements and four-point probe. The mobility of the transferred Si layer on glass is about 122cm^2//V.s. The results show that the single-crystal silicon layer transferred onto glass by direct bonding keeps good quality for the applications of integrated circuits, transducers, and fiat panel display.     

Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs

Highly arsenic-doped Si-on-insulator （SOI） substrate incorporated with buried MoSi2 layers is fabricated aiming at decreasing the collector series resistance of SiGe heterojunction bipolar transistors （HBTs） on SOI, thereby enhancing cutoff frequency （fT） performance and increasing the maximum value of fT （fTMAX ）. The .fT performance at medium current is enhanced and current required for fT = 15 GHz is reduced by half The value of fTMAX is improved by 30%.     

Fabrication and Characterization of ZnO-Based Film Bulk Acoustic Resonator with a High Working Frequency

We report on the fabrication and characterization of a ZnO-based film-bulk acoustic-resonance device utilized as biosensor. The device has a multilayer structure which consists of piezoelectric element (Au/ZnO/Pt) and a Bragg-reflection-layer acoustic isolation consisting of multilayers of ZnO/Pt. Dielectric measurements have revealed that the device has a very high working frequency (up to -3.1 GHz), meaning that the device may have a higher sensitivity than the devices reported in the literature.