Defect physics of the quasi-two-dimensional photovoltaic semiconductor GeSe

GeSe has recently emerged as a photovoltaic absorber material due to its attractive optical and electrical properties as well as earth abundancy and low toxicity. However, the efficiency of GeSe thin-film solar cells (TFSCs) is still low compared to the Shockley-Queisser limit. Point defects are believed to play important roles in the electrical and optical properties of GeSe thin films. Here, we perform first-principles calculations to study the defect characteristics of GeSe. Our results demonstrate that no matter under the Ge-rich or Se-rich condition, the Fermi level is always located near the valence band edge, leading to the p-type conductivity of undoped samples. Under Se-rich condition, the Ge vacancy (V_Ge) has the lowest formation energy, with a (0/2-) charge-state transition level at 0.22 eV above the valence band edge. The high density (above 10¹⁷ cm^-3) and shallow level of V_Ge imply that it is the p-type origin of GeSe. Under Se-rich growth condition, Se_i has a low formation energy in the neutral state, but it does not introduce any defect level in the band gap, suggesting that it neither contributes to electrical conductivity nor induces non-radiative recombination. In addition, Ge_i introduces a deep charge-state transition level, making it a possible recombination center. Therefore, we propose that the Se-rich condition should be adopted to fabricate high-efficiency GeSe solar cells.     

Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH_3NH_3PbI_3

The organic-inorganic hybrid perovskite CH_3NH_3PbI_3 has attracted significant interest for its high performance in converting solar light into electrical power with an efficiency exceeding 20%. Unfortunately, chemical stability is one major challenge in the development of CH_3NH_3PbI_3 solar cells. It was commonly assumed that moisture or oxygen in the environment causes the poor stability of hybrid halide perovskites, however, here we show from the first-principles calculations that the room-temperature tetragonal phase of CH_3NH_3PbI_3 is thermodynamically unstable with respect to the phase separation into CH_3NH_3I + PbI_2, i.e., the disproportionation is exothermic,independent of the humidity or oxygen in the atmosphere. When the structure is distorted to the low-temperature orthorhombic phase, the energetic cost of separation increases, but remains small. Contributions from vibrational and configurational entropy at room temperature have been considered, but the instability of CH_3NH_3PbI_3 is unchanged. When I is replaced by Br or Cl, Pb by Sn, or the organic cation CH_3NH_3 by inorganic Cs, the perovskites become more stable and do not phase-separate spontaneously. Our study highlights that the poor chemical stability is intrinsic to CH_3NH_3PbI_3 and suggests that element-substitution may solve the chemical stability problem in hybrid halide perovskite solar cells.     

Theoretical study on the kesterite solar cells based on Cu_2ZnSn(S,Se)_4 and related photovoltaic semiconductors

The kesterite thin film solar cells based on the quaternary Cu_2ZnSnS_4 and Cu_2ZnSnSe_4 and their alloys Cu_2ZnSn(S,Se)_4 have been considered as environment-friendly and non-toxic alternatives to the currently commercialized Cd Te and Cu(In,Ga)Se_2 thin film solar cells.From the theoretical point of view,we will review how the group Ⅰ_2-Ⅱ-Ⅳ-Ⅵ_4 quaternary compound semiconductors are derived from the binary CdTe and the ternary CuInSe_2 or CuGaSe_2 through the cation mutation,and how the crystal structure and electronic band structure evolve as the component elements change.The increased structural and chemical freedom in these quaternary semiconductors opens up new possibility for the tailoring of material properties and design of new light-absorber semiconductors.However,the increased freedom also makes the development of high-efficiency solar cells more challenging because much more intrinsic point defects,secondary phases,surfaces,and grain-boundaries can exist in the thin films and influence the photovoltaic performance in a way different from that in the conventional Cd Te and Cu(In,Ga)Se_2 solar cells.The experimental characterization of the properties of defects,secondary phase,and grain-boundaries is currently not very efficient and direct,especially for these quaternary compounds.First-principles calculations have been successfully used in the past decade for studying these properties.Here we will review the theoretical progress in the study of the mixed-cation and mixed-anion alloys of the group Ⅰ_2-Ⅱ-Ⅳ-Ⅵ_4 semiconductors,defects,alkaline dopants,and grain boundaries,which provided very important information for the optimization of the kesterite solar cell performance.     

Cu2ZnSnS4类四元硫族半导体的理论研究——以二元、三元、四元半导体的演化为思路

在过去60多年中,人们对半导体的研究集中在一元、二元和三元半导体方面,最近,出于寻找新型廉价、环保、高效光伏转换材料的需要,Cu2ZnSnS4类Ⅰ2-Ⅱ-Ⅳ- Ⅵ4型四元硫族半导体吸引了人们越来越多的关注,它在光催化和热电等多方面的应用也不断被发掘.然而,对于这类四元半导体的基本性质,如晶体结构和电子结构,人们知之甚少,很多研究还停留在经验阶段.文章首先简要回顾了这类半导体的由来和在应用方面的最新进展,然后详细介绍了文章作者对这类四元半导体的第一性原理计算研究工作的进展,其中包括:系统研究了这类硫族半导体在从二元向三元再向四元的演化过程中晶体结构和电子能带结构变化的规律,总结了元素成分对其影响的一般趋势,并结合实验结果分析了这类四元半导体晶格结构表征和带隙测量中易于出现的混淆;文章作者还以Cu2ZnSnS4为例,考察了这类四元化合物相对二元、三元化合物的相稳定性和本征缺陷性质.文章介绍的研究结果将为一系列Ⅰ2-Ⅱ-Ⅳ- Ⅵ4型四元半导体的深入研究提供基础.     

多元半导体光伏材料中晶格缺陷的计算预测

半导体光伏材料的发展在过去60多年中表现出了清晰的多元化趋势. 从20世纪50年代的一元Si太阳能电池, 到20世纪60年代的GaAs和CdTe电池、70年代的CuInSe₂电池、80年代的Cu(In, Ga) Se₂、90年代的Cu₂ZnSnS₄电池, 再到最近的Cu₂ZnSn(S, Se)₄和CH₃NH₃PbI₃电池, 组成光伏半导体的元素种类从一元逐渐增多到五元. 元素种类的增多使得半导体物性调控的自由度增多, 物性更加丰富, 因而能满足光伏等器件应用的需要. 但是, 组分元素种类的增多也导致半导体中晶格点缺陷的种类大幅增加, 可能对其光学、电学性质和光伏性能产生显著影响. 近20年来, 第一性原理计算被广泛应用于半导体中晶格点缺陷的理论预测, 相对于间接的实验手段, 第一性原理计算具有更加直接的、明确的优势, 并且能对各种点缺陷进行快速的研究. 对于缺陷种类众多的多元半导体体系, 第一性原理计算能预测各种点缺陷的微观构型、浓度和跃迁(离化)能级位置, 从而揭示其对光电性质的影响, 发现影响器件性能的关键缺陷. 因而, 相关的计算结果对于实验研究有直接、重要的指导意义. 本文将首先介绍半导体点缺陷研究的第一性原理计算模型和计算流程; 然后, 总结近5年来两类新型光伏半导体材料, 类似闪锌矿结构的Cu₂ZnSn(S, Se)₄半导体和有机-无机杂化的钙钛矿结构CH₃NH₃PbI₃半导体的点缺陷性质; 以这两类体系为例, 介绍多元半导体缺陷性质的独特特征及其对太阳能电池器件性能的影响.