Eu3+,Tm3+共掺GaN薄膜的发光特性和能量传递机制

采用离子注入的方法制备了Eu³⁺,Tm³⁺离子共掺杂GaN薄膜。通过温度依赖光致发光光谱研究了GaN:Eu³⁺薄膜中Eu³⁺的发光特性,发现了三类具有不同温度依赖特性的Eu³⁺发射峰。利用阴极荧光光谱探究了GaN:Eu³⁺,Tm³⁺薄膜的光谱性质,发现随着Tm³⁺剂量的增加,Eu³⁺发射强度以及Tm³⁺的I₄₈₀/I₈₀₆强度比值均发生降低,分析表明存在Eu³⁺→Tm³⁺离子的能量传递,并通过计算分析证明其能量传递机制主要为电偶极子-电偶极子相互作用。通过改变Eu³⁺、Tm³⁺离子在GaN薄膜中的剂量比例,实现了材料发光颜色的有效调控。     

Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy (HVPE). The influences of growth condition on surface morphology, residual strain and crystalline quality of AlN films have been investigated. With the increase of the V/III ratio, the growth mode of AlN grown on C-face 6H-SiC substrates changes from step-flow to pit-hole morphology. Atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman analysis show that cracks appear due to tensile stress in the films with the lowest V/III ratio and the highest V/III ratio with a thickness of about 3 μm. In contrast, under the medium V/III ratio growth condition, the porous film can be obtained. Even when the thickness of the porous AlN film is further increased to 8 μm, the film remains porous and crack-free, and the crystal quality is improved.