碳纳米管表面沉积铂及其质子交换膜燃料电池的性能

研究了在碳纳米管表面上沉积金属铂的新工艺,并对以Pt/CNTs为催化剂的质子交换膜燃料电池的性能进行了测量.实验结果表明,这种新的沉积方法能够在碳纳米管表面沉积上得到尺寸细小(3nm左右）、分布均匀的铂颗粒.并且得到的Pt/CNTs在质子交换膜燃料电池中表现出良好的催化性能.     

A theoretical study of harmonic generation in a short period AlGaN/GaN superlattice induced by a terahertz field

Based on an improved energy dispersion relation, the terahertz field induced nonlinear transport of miniband electrons in a short period AlGaN/GaN superlattice is theoretically studied in this paper with a semiclassical theory. To a short period superlattice, it is not precise enough to calculate the energy dispersion relation by just using the nearest wells in tight binding method: the next to nearest wells should be considered. The results show that the electron drift velocity is 30% lower under a dc field but 10% higher under an ac field than the traditional simple cosine model obtained from the tight binding method. The influence of the terahertz field strength and frequency on the harmonic amplitude, phase and power efficiency is calculated. The relative power efficiency of the third harmonic reaches the peak value when the dc field strength equals about three times the critical field strength and the ac field strength equals about four times the critical field strength. These results show that the AlGaN/GaN superlattice is a promising candidate to convert radiation of frequency ω to radiation of frequency 3ω or even higher.     

AlGaN/GaN槽栅HEMT模拟与实验研究

分析了栅槽深度对AlGaN/GaN HEMT特性的影响,并对不同栅槽深度的器件特性进行了模拟,得到了器件饱和电流、最大跨导和阈值电压随栅槽深度的变化规律.当槽栅深度增大,器件饱和电流逐渐下降,而最大跨导逐渐增大,阈值电压向X轴正方向移动.研制出不同栅槽深度的蓝宝石衬底AlGaN/GaN HEMT,用实验数据验证了得到的不同栅槽深度器件特性变化规律.从刻蚀损伤和刻蚀引入界面态的角度分析了模拟与实验规律产生差别的原因. 关键词： 高电子迁移率晶体管 AlGaN/GaN 槽栅器件