The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress

Step-stress experiments are performed in this paper to investigate the degradation mechanism of an AlGaN/GaN high electron mobility transistor(HEMT).It is found that the stress current shows a recoverable decrease during each voltage step and there is a critical voltage beyond which the stress current starts to increase sharply in our experiments.We postulate that defects may be randomly induced within the AlGaN barrier by the high electric field during each voltage step.But once the critical voltage is reached,the trap concentration will increase sharply due to the inverse piezoelectric effect.A leakage path may be introduced by excessive defect,and this may result in the permanent degradation of the AlGaN/GaN HEMT.     

基于锥形渐变耦合结构的可扩展多模弯曲波导EI北大核心CSCD

提出了一种基于锥形渐变耦合结构的可扩展多模弯曲波导。该器件利用模式等效折射率匹配原理,通过对称的锥形渐变耦合结构,实现高阶模式与基模的相互转化,完成多模弯曲传输功能。同时,结合时域有限差分方法和粒子群优化算法,优化锥形渐变耦合结构区域,提升器件性能。实验测试结果表明,在1520~1600 nm的波长范围内,当输入模式分别为TE_0、TE_1、TE_2、TE_(3)和TE_(4)时,该器件的插入损耗分别小于1.71 dB、3.04 dB、2.90 dB、3.16 dB和4.00 dB,对应的串扰分别小于-10.60 dB、-11.35 dB、-10.92 dB、-10.35 dB和-11.45 dB。     

基于交叉相位调制效应的硅基全光Fredkin门

虽然传统的Fredkin门可以很好地实现相应的逻辑功能,但是其消光比和串扰还有待进一步改善.鉴于此,本文提出并设计一种基于交叉相位调制效应的硅基全光Fredkin门,该全光可逆逻辑门由两个2×2的定向耦合器、一个2×1的定向耦合器、一个1×2的定向耦合器以及两个相移臂构成.利用泵浦光与信号光在相移臂中引发的交叉相位调制...     

Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

The kink effect in current–voltage(IV)characteristic s seriously deteriorates the performance of a GaN-based HEMT.Based on a series of direct current(DC)IV measurements in a GaN-based HEMT with an AlGaN back barrier,a possible mechanism with electron-trapping and detrapping processes is proposed.Kink-related deep levels are activated by a high drain source voltage(Vds)and located in a GaN channel layer.Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization.Moreover,the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.     

基于石墨烯表面等离子激元波导的同或/异或门

设计了一种基于石墨烯表面等离子激元波导的同或/异或逻辑门,其采用了上下话路型微环谐振器为基本单元。通过调节石墨烯化学势来控制石墨烯表面等离子激元的传输状态,器件的两个不同输出端口同时获得同或和异或逻辑运算结果。仿真分析结果表明:当工作频率为30THz,石墨烯化学势为0.677eV和0.95eV时,基于石墨烯表面等离子激元波导的上下话路型微环谐振器可实现开启与关闭;所构建的同或/异或逻辑门在‘00’、‘01’、‘10’、‘11’四组逻辑操作数下的最差串扰为-10.60dB。     

基于IPSO的风光高渗透电网抽水蓄能电站容量优化

针对现有的抽水蓄能电站容量优化方法较多忽略其较大的电能时空转移效益与增强系统调峰能力效益,文章在构建抽水蓄能电站提升新能源发电并网消纳能力提升的充放电数学模型的基础上,进一步综合考虑电站的电量效益、电能时空转移效益、环境效益、调峰效益以及电站的初始投建成本、运维成本与废弃电站处理成本,构建抽水蓄能电站容量优化数学模型,并采用改进的粒子优化群算法(Improved Particle Swarm Organization,IPSO)对模型进行求解.最后,以新疆某含大规模风电与光伏发电的区域电网运行数据为背景,仿真验证了本文所提出方法的正确性与有效性.     

AlGaN/GaN高电子迁移率晶体管中kink效应的半经验模型

初步分析了AlGaN/GaN 器件上的kink效应. 在直流模型的基础上, 建立了AlGaN/GaN 高电子迁移率晶体管中kink效应的半经验模型, 并加入了kink效应发生的漏源偏压与栅源偏压的关系. 该模型得出较为准确的模拟结果, 可用来判断kink效应的发生和电流的变化量. 最后, 我们采用模型仿真结合实验分析的方法, 对kink效应进行了一定的物理研究, 结果表明碰撞电离对kink效应的发生有一定的促进作用.     

Kink effect in current-voltage characteristics of a GaN-based high electron mobility transistor with an AIGaN back barrier

The kink effect in current-voltage （IV） characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current （DC） IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage （Vds） and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.     

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor

In this paper,the influence of a drain field plate(FP)on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor(HEMT)is investigated.The HEMT with only a gate FP is optimized,and breakdown voltage VBRis saturated at 1085 V for gate–drain spacing LGD≥8μm.On the basis of the HEMT with a gate FP,a drain FP is added with LGD=10μm.For the length of the drain FP LDF≤2μm,VBRis almost kept at 1085 V,showing no degradation.When LDFexceeds 2μm,VBRdecreases obviously as LDFincreases.Moreover,the larger the LDF,the larger the decrease of VBR.It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGDat which VBR begins to saturate in the first structure.The electric field and potential distribution are simulated and analyzed to account for the decrease of VBR.