磁场中激光牵引热解石墨的理论与实验研究

利用钕铁硼永磁体搭建了悬浮平台,抗磁性物质热解石墨片做悬浮物,在光热效应下,研究了激光牵引磁悬浮热解石墨的运动机制.从悬浮物受力公式出发,将其分为磁场与热场2部分影响,结合Matlab给出理论公式与实验方案,通过实验验证了理论的自洽性.使用COMSOL进行数值模拟,给出定位情况下的受力情况、磁场分布以及热场分布等.使用COMSOL建立了相关APP,可以得到磁铁序列的磁场分布、势场分布、热解石墨片的热场分布及其在磁场中任意位置的受力.     

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

In the process of high-k films fabrication, a novel multi deposition multi annealing(MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing(PDA) times. The equivalent oxide thickness(EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore,the characteristics of SILC(stress-induced leakage current) for an ultra-thin SiO_2/HfO_2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.     

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown(TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper.Based on experimental results,it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer.From the charge pumping measurement and secondary ion mass spectroscopy(SIMS) analysis,it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density.In addition,the influences of interface and bulk trap density ratio N_(it)/N_(ot) are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo(kMC) method.The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses.